公开(公告)号：US09484739B2

公开(公告)日：2016-11-01

申请号：US14496839

申请日：2014-09-25

Applicant: ANALOG DEVICES GLOBAL

Inventor： Edward John Coyne ,  John Twomey ,  Seamus P. Whiston ,  David J. Clarke ,  Donal P. McAuliffe ,  William Allan Lane ,  Stephen Denis Heffernan ,  Brian A. Moane ,  Brian Michael Sweeney ,  Patrick Martin McGuinness

IPC: H02H3/20 ,  H02H9/04 ,  H01L27/02 ,  H02H7/16

CPC classification number: H02H9/044 ,  H01L27/0259 ,  H02H7/16

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract translation: 提供一种保护装置，其展现了一纳秒或更少的转动时间。 这样一种器件为集成电路提供了防止静电放电事件的增强保护。 这反过来又降低了使用设备故障的风险。 保护装置可以包括连接在要保护的节点和放电路径之间的双极晶体管结构。

公开(公告)号：US20160094026A1

公开(公告)日：2016-03-31

申请号：US14496839

申请日：2014-09-25

Applicant: ANALOG DEVICES GLOBAL

Inventor： Edward John Coyne ,  John Twomey ,  Seamus P. Whiston ,  David J. Clarke ,  Donal P. McAuliffe ,  William Allan Lane ,  Stephen Denis Heffernan ,  Brian A. Moane ,  Brian Michael Sweeney ,  Patrick Martin McGuinness

IPC: H02H9/04 ,  H02H7/16

CPC classification number: H02H9/044 ,  H01L27/0259 ,  H02H7/16

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract translation: 提供一种保护装置，其展现了一纳秒或更少的转动时间。 这样一种器件为集成电路提供了防止静电放电事件的增强保护。 这反过来又降低了使用设备故障的风险。 保护装置可以包括连接在要保护的节点和放电路径之间的双极晶体管结构。