APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
    1.
    发明申请
    APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME 审中-公开
    用于制造半导体器件的装置及使用其制造半导体器件的方法

    公开(公告)号:US20160284562A1

    公开(公告)日:2016-09-29

    申请号:US15081836

    申请日:2016-03-25

    Abstract: The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.

    Abstract translation: 本公开控制热源单元,使得其中形成有含氢待处理层的被处理物体被两次照射,因此半导体器件的电特性可以是 抑制和防止由于氢而劣化。 也就是说,首先辐射的紫外线(UV)可能引起用于分离被处理层中的Si-H键的化学反应,并且第二次辐射的红外光(IR)可能引起热反应, 从Si-H键分离出氢。 因此,进行用于分离待处理层中的氢和其它离子的键的化学反应和用于汽化氢的热反应,因此氢可以比从氢气蒸发的温度更容易地除去 待处理层仅通过热反应。

    HEATER BLOCK AND SUBSTRATE PROCESSING APPARATUS
    2.
    发明申请
    HEATER BLOCK AND SUBSTRATE PROCESSING APPARATUS 审中-公开
    加热块和基板加工设备

    公开(公告)号:US20160284572A1

    公开(公告)日:2016-09-29

    申请号:US15051660

    申请日:2016-02-23

    CPC classification number: H01L21/67115 H05B1/0233

    Abstract: Present disclosure relates to a heater block including a plurality of heating lamps mounted on one surface thereof facing an object to be processed, e.g., a substrate and a substrate processing apparatus including the same. The heating lamp includes a first lamp configured to irradiate ultraviolet (UV) rays to the object to be processed and a second lamp configured to irradiate infrared (IR) rays to the object to be processed. A relative ratio of the number of first lamp to the number of second lamp is different for each of a plurality of areas on the one surface. Provided are the heater block that may thermally compensate a temperature of an edge area of the substrate to increase temperature uniformity of the substrate and the substrate processing apparatus.

    Abstract translation: 本公开涉及一种加热器块,其包括安装在其面对待处理物体的一个表面上的多个加热灯,例如基板和包括该加热器的基板处理设备。 加热灯包括被配置为向待处理物体照射紫外(UV)射线的第一灯和配置成向被处理物体照射红外(IR)射线的第二灯。 第一灯的数量与第二灯的数量的相对比对于一个表面上的多个区域中的每个区域是不同的。 提供了可以热补偿衬底的边缘区域的温度以增加衬底和衬底处理设备的温度均匀性的加热器块。

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