公开(公告)号：US20150064878A1

公开(公告)日：2015-03-05

申请号：US14091014

申请日：2013-11-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei-Sheng LEI ,  Brad EATON ,  Aparna IYER ,  Madhava Rao YALAMANCHILI ,  Ajay KUMAR ,  Jungrae PARK

IPC: H01L21/78 ,  B23K26/36 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/78 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/67069 ,  H01L21/67207

Abstract: In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation while also removing an oxidation layer from metal bumps on the wafer. In one embodiment, a method includes forming a mask over the semiconductor wafer covering the plurality of ICs, the plurality of ICs including metal bumps or pads with an oxidation layer. The method includes patterning the mask with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the ICs. The method includes plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the plurality of ICs and remove the oxidation layer from the metal bumps or pads.

Abstract translation: 在实施例中，涉及初始激光划片和随后等离子体蚀刻的混合晶片或衬底切割工艺被实现用于裸片分离，同时还从晶片上的金属凸块去除氧化层。 在一个实施例中，一种方法包括在覆盖多个IC的半导体晶片上形成掩模，所述多个IC包括具有氧化层的金属凸块或焊盘。 该方法包括用激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模，暴露半导体晶片在IC之间的区域。 该方法包括通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以分离多个IC并从金属凸块或焊盘移除氧化层。