公开(公告)号：US20180096834A1

公开(公告)日：2018-04-05

申请号：US15833728

申请日：2017-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： David KNAPP ,  Simon HUANG ,  Jeffrey W. ANTHIS ,  Philip Alan KRAUS ,  David THOMPSON

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32

CPC classification number: H01L21/0332 ,  B82Y30/00 ,  C08K3/04 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/0206 ,  H01L21/0335 ,  H01L21/0337

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

公开(公告)号：US20230207291A1

公开(公告)日：2023-06-29

申请号：US17716419

申请日：2022-04-08

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Rene GEORGE ,  Tsung-Han YANG ,  David KNAPP ,  Lara HAWRYLCHAK

IPC: H01J37/32 ,  H01L21/02 ,  C23C8/36 ,  C23C8/12

CPC classification number: H01J37/32816 ,  H01L21/02238 ,  H01L21/0223 ,  H01L21/02252 ,  H01J37/3244 ,  H01J37/32357 ,  H01J37/321 ,  C23C8/36 ,  C23C8/12 ,  H01L27/115

Abstract: A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high pressure oxidant exposure and a lower pressure oxygen containing plasma exposure. The high pressure oxidant exposure is performed at a pressure of greater than 10 Torr, while the lower pressure oxygen containing plasma exposure is performed at a pressure of less than about 10 Torr. The features are high-aspect ratio trenches or holes within a stack of silicon oxide and silicon nitride layers.

公开(公告)号：US20200310001A1

公开(公告)日：2020-10-01

申请号：US16820338

申请日：2020-03-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander BERGER ,  Cheng-Hsuan CHOU ,  David KNAPP

IPC: G02B1/16 ,  G02B1/14

Abstract: Described herein is a method of depositing a conformal, optically transparent coating onto a surface of one or more internal components that are enclosed within an assembled device using a non-line-of-sight deposition process without altering a structure of the assembled device or impacting functionality of the assembled device. Also described is an assembled device including one or more internal components enclosed within the assembled device and a coating deposited onto a surface of the internal components enclosed within the assembled device, where the coating is a conformal, optically transparent coating that is resistant to corrosion by at least one of fluorine-, chlorine-, sulfur-, hydrogen-, bromine-, or nitrogen-based acids and that does not negatively impact functionality of the internal components.