公开(公告)号：US20020114886A1

公开(公告)日：2002-08-22

申请号：US10026378

申请日：2001-12-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Jing-Pei Chou ,  Chien-Teh Kao ,  Chiukin Steven Lai ,  Roderick Craig Mosely ,  Mei Chang ,  Fufa Chen

IPC: C23C016/14

CPC classification number: C23C16/4408 ,  C23C16/34 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864

Abstract: A method of forming a titanium silicide nitride (TiSiN) layer is described. A titanium nitride (TiN) layer is deposited on a substrate, the process chamber is purged to remove reaction by-products therefrom and than the titanium nitride (TiN) layer is exposed to a silicon-containing gas to form the titanium suicide nitride (TiSiN) layer. Alternatively, the substrate may be exposed to the silicon-containing gas in a process chamber different from the one used for the titanium nitride (TiN) layer deposition.

Abstract translation: 描述了形成硅化钛氮化物（TiSiN）层的方法。 氮化钛（TiN）层沉积在衬底上，处理室被清除以除去其中的副产物，并且将氮化钛（TiN）层暴露于含硅气体中以形成硅化钛氮化物（TiSiN ）层。 或者，可以在与用于氮化钛（TiN）层沉积的处理室不同的处理室中将衬底暴露于含硅气体。