中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.013 seconds)

    Reliability barrier integration for Cu application
    1.
    发明申请
    Reliability barrier integration for Cu application 审中-公开
    Cu应用的可靠性屏障整合

    公开(公告)号：US20030013297A1

    公开(公告)日：2003-01-16

    申请号：US10245104

    申请日：2002-09-16

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Fusen Chen ,  Liang-Yuh Chen ,  Roderick Craig Mosely ,  Moshe Eizenberg

    IPC: H01L021/4763

    CPC classification number: H01L21/76804 ,  C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention provides a process sequence and related hardware for filling a hole with copper. The sequence comprises first forming a reliable barrier layer in the hole to prevent diffusion of the copper into the dielectric layer through which the hole is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the bottom of the hole, depositing a second barrier, and then filling the hole with copper. An alternative sequence comprises depositing a first barrier layer over a blanket dielectric layer, forming a hole through both the barrier layer and the dielectric layer, depositing a generally conformal second barrier layer in the hole, removing the barrier layer from the bottom of the hole, and selectively filling the hole with copper.

    Abstract translation: 本发明提供了用铜填充孔的工艺顺序和相关硬件。 该顺序包括首先在孔中形成可靠的阻挡层，以防止铜扩散到形成孔的电介质层中。 一个序列包括在图案化电介质上形成大致保形的阻挡层，蚀刻孔的底部，沉积第二屏障，然后用铜填充孔。 替代的顺序包括在覆盖的介电层上沉积第一阻挡层，通过阻挡层和电介质层两者形成孔，在孔中沉积大致保形的第二阻挡层，从孔的底部去除阻挡层， 并用铜选择性地填充孔。

    Method and apparatus for forming metal interconnects
    2.
    发明申请
    Method and apparatus for forming metal interconnects 审中-公开

    公开(公告)号：US20020058408A1

    公开(公告)日：2002-05-16

    申请号：US10043422

    申请日：2002-01-10

    Applicant: Applied Materials, Inc.

    Inventor： Dan Maydan ,  Ashok K. Sinha ,  Zheng Xu ,  Liang-Yuh Chen ,  Roderick Craig Mosely ,  Daniel Carl ,  Diana Xiaobing Ma ,  Yan Ye ,  Wen Chiang Tu

    IPC: H01L021/4763

    CPC classification number: H01L21/76885 ,  H01L21/32136 ,  H01L21/76834

    Abstract: The present invention provides a method and apparatus for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to provide an etch stop during line etching and to prevent diffusion of the metal, such as copper, into the surrounding dielectric material if the line is misaligned over the via. Additionally, the barrier plug prevents an overall reduction in resistance of the interconnect and enables reactive ion etching to be employed to form the metal line. In another aspect, reactive ion etching techniques are employed to selectively etch the metal line and the barrier layer to provide a controlled etching process which exhibits selectivity for the metal line, then the barrier and then the via or plug.

    Reactive preclean prior to metallization for sub-quarter micron application
    4.
    发明申请
    Reactive preclean prior to metallization for sub-quarter micron application 失效
    金属化之前的反应性预清洗用于二分之一微米的应用

    公开(公告)号：US20040248404A1

    公开(公告)日：2004-12-09

    申请号：US10780105

    申请日：2004-02-17

    Applicant: Applied Materials, Inc.

    Inventor： Suchitra Subrahmanyan ,  Liang-Yuh Chen ,  Roderick Craig Mosely

    IPC: H01L021/4763

    CPC classification number: C23C16/0236 ,  C23C14/022 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76861 ,  Y10S438/906

    Abstract: The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/O2, or a mixture of He/NF3, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available metallization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and metallization steps can be conducted on available integrated processing platforms.

    Abstract translation: 本发明通常在金属化之前提供在衬底上的亚微米特征的预清洗工艺。 该方法包括用来自诸如氧的反应性气体的等离子体，CF 4 / O 2或He / NF 3的混合物的混合物的自由基清洗亚微米特征，其中等离子体优选由远程等离子体源产生，并且基团是 输送到其中设置基板的室。 残留在亚微米特征中的天然氧化物优选通过用含有氢的等离子体进行处理而在第二步骤中还原。 在第一或两个预清洗步骤之后，特征可以通过可用的金属化技术用金属填充，其通常包括在沉积铝，铜或钨之前在暴露的电介质表面上沉积阻挡层/衬垫层。 预清洗和金属化步骤可以在可用的集成处理平台上进行。

Patent Agency Ranking