SUBSTRATE PLACEMENT DETECTION IN SEMICONDUCTOR EQUIPMENT USING THERMAL RESPONSE CHARACTERISTICS
    1.
    发明申请
    SUBSTRATE PLACEMENT DETECTION IN SEMICONDUCTOR EQUIPMENT USING THERMAL RESPONSE CHARACTERISTICS 有权
    使用热响应特性的半导体器件中的衬底放置检测

    公开(公告)号:US20150063405A1

    公开(公告)日:2015-03-05

    申请号:US14470236

    申请日:2014-08-27

    CPC classification number: G01B21/00 H01L21/67259

    Abstract: Methods and apparatus for determining proper placement of a substrate upon a substrate support in a process chamber are disclosed. In some embodiments, a method for detecting substrate placement in a process chamber includes placing a substrate on a support surface of a substrate support with the process chamber; modifying a pressure within the chamber to create a detection pressure within the chamber; sensing a first temperature of the substrate support; monitoring a thermal response characteristic of the substrate support after placing the substrate on the substrate support; comparing the thermal response characteristic to a predetermined response characteristic; and determining whether the substrate is placed correctly based upon the comparison of the thermal response characteristic to the predetermined response characteristic.

    Abstract translation: 公开了用于确定基板在处理室中的基板支撑件上的适当放置的方法和装置。 在一些实施例中,用于检测处理室中的衬底放置的方法包括:将衬底放置在处理室的衬底支撑件的支撑表面上; 修改腔室内的压力以在腔室内产生检测压力; 感测所述衬底支撑件的第一温度; 在将衬底放置在衬底支架上之后监测衬底支撑件的热响应特性; 将热响应特性与预定响应特性进行比较; 以及基于热响应特性与预定响应特性的比较来确定衬底是否被正确放置。

    APPARATUS FOR UNIFORM PUMPING WITHIN A SUBSTRATE PROCESS CHAMBER
    2.
    发明申请
    APPARATUS FOR UNIFORM PUMPING WITHIN A SUBSTRATE PROCESS CHAMBER 有权
    用于在基板工艺室内均匀泵送的装置

    公开(公告)号:US20130284287A1

    公开(公告)日:2013-10-31

    申请号:US13871671

    申请日:2013-04-26

    Abstract: Substrate supports for use in process chambers having limited physical space for configuring chamber components are disclosed. In some embodiments, a substrate support may include a body having a support surface; a utilities feed coupled to the body and comprising a second portion coupled to and extending laterally away from the body beyond a diameter of the body, and first portion coupled to the second portion and extending perpendicularly away from the body; and a cover plate movably disposable beneath and with respect to the body between a first position disposed completely beneath the body, and a second position wherein the cover plate is disposed over the first portion of the utilities feed and includes a first portion disposed beneath the body, and wherein the first portion has a curved edge having a radius equal to the distance from a central axis of the support surface to the curved edge.

    Abstract translation: 公开了用于配置室部件的具有有限物理空间的处理室中的基板支撑。 在一些实施例中,衬底支撑件可以包括具有支撑表面的主体; 耦合到所述主体并且包括耦合到所述主体并且远离所述主体的所述主体的第二部分超过所述主体的直径的第二部分,以及联接到所述第二部分并且垂直地远离所述主体延伸的第一部分; 以及盖板,其可移动地一次性地在主体之下并相对于主体移动,在完全位于主体下方的第一位置和第二位置之间,其中盖板设置在公用设施进料的第一部分之上,并且包括设置在主体下方的第一部分 ,并且其中所述第一部分具有弯曲边缘,其具有等于从所述支撑表面的中心轴线到所述弯曲边缘的距离的半径。

    PARTICLE REDUCTION VIA THROTTLE GATE VALVE PURGE
    3.
    发明申请
    PARTICLE REDUCTION VIA THROTTLE GATE VALVE PURGE 有权
    颗粒减少通过节流门阀

    公开(公告)号:US20140366953A1

    公开(公告)日:2014-12-18

    申请号:US14276289

    申请日:2014-05-13

    Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.

    Abstract translation: 本文提供了在基板处理室中使用的节流闸阀中减小颗粒的方法和装置。 在一些实施例中,用于处理室的闸阀包括具有从主体的第一表面到相对的第二表面穿过的开口的主体; 从开口的侧壁延伸到主体中的口袋; 可移动地设置在所述口袋内的封闭位置,所述关闭位置密封所述开口和露出所述开口的打开位置,并完全将所述门置于所述口袋内; 以及设置在所述闸阀中的多个气体端口,其构造成将气流引导到与所述开口流体连接的所述闸阀的一部分。

    METHODS AND APPARATUS FOR PROVIDING A GAS MIXTURE TO A PAIR OF PROCESS CHAMBERS
    4.
    发明申请
    METHODS AND APPARATUS FOR PROVIDING A GAS MIXTURE TO A PAIR OF PROCESS CHAMBERS 有权
    将气体混合物提供给过程池对的方法和装置

    公开(公告)号:US20140076850A1

    公开(公告)日:2014-03-20

    申请号:US14091942

    申请日:2013-11-27

    Abstract: A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.

    Abstract translation: 描述了一种将气体混合物供应到负载锁定室的方法和装置。 在一个实施例中,该装置将气体混合物提供给一对处理室,包括第一臭氧发生器以向第一处理室提供第一气体混合物,第二臭氧发生器将第二气体混合物提供给第二处理室, 第一气体源,经由第一质量流量控制器和第一气体管线耦合到第一臭氧发生器,并且经由第二质量流量控制器和第二气体管线耦合到第二臭氧发生器,以及耦合到第一气体源的第一气体源 臭氧发生器,经由第三质量流量控制器和第三气体管线,并经由第四质量流量控制器和第四气体管线与第二臭氧发生器连接。

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