公开(公告)号：US20130105085A1

公开(公告)日：2013-05-02

申请号：US13647574

申请日：2012-10-09

Applicant: Applied Materials, Inc.

Inventor： IMAD YOUSIF ,  MARTIN JEFFREY SALINAS ,  SAMER BANNA ,  ANDREW NGUYEN ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY ,  ANKUR AGARWAL ,  KALLOL BERA

IPC: H01L21/20 ,  H01L21/306

CPC classification number: H01L21/20 ,  H01J37/32522 ,  H01L21/30604

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a first conductive body disposed about a substrate support in the inner volume of a process chamber; a first conductive ring having an inner edge coupled to a first end of the second conductive body and having an outer edge disposed radially outward of the inner edge; a second conductive body coupled to the outer edge of the first conductive ring and having at least a portion disposed above the first conductive ring, wherein the first conductive ring and the at least a portion of the second conductive body partially define a first region above the first conductive ring; and a heater configured to heat the first conductive body, the second conductive body, and the first conductive ring.

Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，一种装置包括：第一导电体，其布置在处理室的内部体积中的基板支撑件周围; 第一导电环，其具有耦合到所述第二导电体的第一端的内边缘，并且具有设置在所述内边缘的径向外侧的外边缘; 耦合到所述第一导电环的所述外边缘并且具有设置在所述第一导电环上方的至少一部分的第二导电体，其中所述第一导电环和所述第二导电体的所述至少一部分部分地限定所述第一导电环上方的第一区域 第一导电环; 以及加热器，被配置为加热第一导电体，第二导​​电体和第一导电环。

公开(公告)号：US20140076850A1

公开(公告)日：2014-03-20

申请号：US14091942

申请日：2013-11-27

Applicant: APPLIED MATERIALS, INC.

Inventor： JARED AHMAD LEE ,  MARTIN JEFFREY SALINAS ,  EZRA ROBERT GOLD ,  JAMES P. CRUSE

IPC: F17D3/03

CPC classification number: F17D3/03 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02071 ,  H01L21/6719 ,  H01L21/67201 ,  Y10T137/0318 ,  Y10T137/877

Abstract: A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.

Abstract translation: 描述了一种将气体混合物供应到负载锁定室的方法和装置。 在一个实施例中，该装置将气体混合物提供给一对处理室，包括第一臭氧发生器以向第一处理室提供第一气体混合物，第二臭氧发生器将第二气体混合物提供给第二处理室， 第一气体源，经由第一质量流量控制器和第一气体管线耦合到第一臭氧发生器，并且经由第二质量流量控制器和第二气体管线耦合到第二臭氧发生器，以及耦合到第一气体源的第一气体源 臭氧发生器，经由第三质量流量控制器和第三气体管线，并经由第四质量流量控制器和第四气体管线与第二臭氧发生器连接。

公开(公告)号：US20150063405A1

公开(公告)日：2015-03-05

申请号：US14470236

申请日：2014-08-27

Applicant: APPLIED MATERIALS, INC.

Inventor： JARED AHMAD LEE ,  MARTIN JEFFREY SALINAS ,  YI ZHOU ,  CHANGHUN LEE

IPC: H01L21/66 ,  G01B21/00

CPC classification number: G01B21/00 ,  H01L21/67259

Abstract: Methods and apparatus for determining proper placement of a substrate upon a substrate support in a process chamber are disclosed. In some embodiments, a method for detecting substrate placement in a process chamber includes placing a substrate on a support surface of a substrate support with the process chamber; modifying a pressure within the chamber to create a detection pressure within the chamber; sensing a first temperature of the substrate support; monitoring a thermal response characteristic of the substrate support after placing the substrate on the substrate support; comparing the thermal response characteristic to a predetermined response characteristic; and determining whether the substrate is placed correctly based upon the comparison of the thermal response characteristic to the predetermined response characteristic.

Abstract translation: 公开了用于确定基板在处理室中的基板支撑件上的适当放置的方法和装置。 在一些实施例中，用于检测处理室中的衬底放置的方法包括：将衬底放置在处理室的衬底支撑件的支撑表面上; 修改腔室内的压力以在腔室内产生检测压力; 感测所述衬底支撑件的第一温度; 在将衬底放置在衬底支架上之后监测衬底支撑件的热响应特性; 将热响应特性与预定响应特性进行比较; 以及基于热响应特性与预定响应特性的比较来确定衬底是否被正确放置。

公开(公告)号：US20130284287A1

公开(公告)日：2013-10-31

申请号：US13871671

申请日：2013-04-26

Applicant: APPLIED MATERIALS, INC.

Inventor： PAUL BENJAMIN REUTER ,  MARTIN JEFFREY SALINAS ,  JARED AHMAD LEE ,  IMAD YOUSIF

IPC: F16L3/00

CPC classification number: F16L3/00 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/68785 ,  Y10T137/6966

Abstract: Substrate supports for use in process chambers having limited physical space for configuring chamber components are disclosed. In some embodiments, a substrate support may include a body having a support surface; a utilities feed coupled to the body and comprising a second portion coupled to and extending laterally away from the body beyond a diameter of the body, and first portion coupled to the second portion and extending perpendicularly away from the body; and a cover plate movably disposable beneath and with respect to the body between a first position disposed completely beneath the body, and a second position wherein the cover plate is disposed over the first portion of the utilities feed and includes a first portion disposed beneath the body, and wherein the first portion has a curved edge having a radius equal to the distance from a central axis of the support surface to the curved edge.

Abstract translation: 公开了用于配置室部件的具有有限物理空间的处理室中的基板支撑。 在一些实施例中，衬底支撑件可以包括具有支撑表面的主体; 耦合到所述主体并且包括耦合到所述主体并且远离所述主体的所述主体的第二部分超过所述主体的直径的第二部分，以及联接到所述第二部分并且垂直地远离所述主体延伸的第一部分; 以及盖板，其可移动地一次性地在主体之下并相对于主体移动，在完全位于主体下方的第一位置和第二位置之间，其中盖板设置在公用设施进料的第一部分之上，并且包括设置在主体下方的第一部分 ，并且其中所述第一部分具有弯曲边缘，其具有等于从所述支撑表面的中心轴线到所述弯曲边缘的距离的半径。