公开(公告)号：US20160027667A1

公开(公告)日：2016-01-28

申请号：US14755646

申请日：2015-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： S. M. REZA SADJADI ,  HAITAO WANG ,  JIE ZHOU ,  TZA-JING GUNG ,  CHUNLEI ZHANG ,  FERNANDO M. SILVEIRA

IPC: H01L21/67 ,  C23C16/505 ,  C23C16/458 ,  C23C16/44 ,  H01J37/32 ,  C23C16/455

CPC classification number: H01L21/67069 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32669

Abstract: In some embodiments, a plasma processing apparatus includes a processing chamber to process a substrate; a mounting surface defined within the processing chamber to support a substrate disposed within the processing chamber; a showerhead disposed within the processing chamber and aligned so as to face the mounting surface, the showerhead defining a plurality of orifices to introduce a process gas into the processing chamber toward a substrate disposed within the processing chamber; and one or more magnets supported by the showerhead and arranged so that a radial component of a magnetic field applied by each of the one or more magnets has a higher flux density proximate a first region corresponding to an edge surface region of a substrate when disposed within the processing chamber than at a second region corresponding to an interior surface region of a substrate when disposed within the processing chamber.

Abstract translation: 在一些实施例中，等离子体处理装置包括处理基板的处理室; 限定在所述处理室内的安装表面，以支撑设置在所述处理室内的衬底; 喷头，其设置在所述处理室内并且对准所述安装表面，所述喷头限定多个孔口，以将处理气体引入所述处理室内朝向设置在所述处理室内的基板; 以及由喷头支撑的一个或多个磁体，并且被布置成使得由一个或多个磁体中的每一个施加的磁场的径向分量在靠近基板的边缘表面区域的第一区域附近具有较高的通量密度， 所述处理室比在处于所述处理室内时对应于衬底的内表面区域的第二区域处。