PROCESS CHAMBER HAVING TUNABLE SHOWERHEAD AND TUNABLE LINER

    公开(公告)号:US20180047544A1

    公开(公告)日:2018-02-15

    申请号:US15673403

    申请日:2017-08-09

    Abstract: Process chambers having a tunable showerhead and a tunable liner are disclosed herein. In some embodiments, a processing chamber includes a showerhead; a chamber liner; a first impedance circuit coupled to the showerhead to tune an impedance of the showerhead; a second impedance circuit coupled to the chamber liner to tune an impedance of the chamber liner; and a controller coupled to the first and second impedance circuits to control relative impedances of the showerhead and the chamber liner.

    REAL-TIME MEASUREMENT OF A SURFACE CHARGE PROFILE OF AN ELECTROSTATIC CHUCK
    3.
    发明申请
    REAL-TIME MEASUREMENT OF A SURFACE CHARGE PROFILE OF AN ELECTROSTATIC CHUCK 审中-公开
    静电卡盘的表面电荷特性的实时测量

    公开(公告)号:US20160116518A1

    公开(公告)日:2016-04-28

    申请号:US14924954

    申请日:2015-10-28

    CPC classification number: G01R29/24 H01L21/67253 H01L21/6833

    Abstract: Methods and apparatus for measurement of a surface charge profile of an electrostatic chuck are provided herein. In some embodiments, an apparatus for measurement of a surface charge profile of an electrostatic chuck includes: an electrostatic charge sensor disposed on a substrate to obtain data indicative of an electrostatic charge on an electrostatic chuck; and a transmitter disposed on the substrate and having an input in communication with an output of the electrostatic charge sensor to transmit the data.

    Abstract translation: 本文提供了用于测量静电卡盘的表面电荷分布的方法和装置。 在一些实施例中,用于测量静电卡盘的表面电荷分布的装置包括:静电电荷传感器,设置在基板上以获得指示静电卡盘上的静电电荷的数据; 以及发射器,其布置在所述衬底上并且具有与所述静电电荷传感器的输出端相通的输入端以传输所述数据。

    SYSTEMS AND METHODS FOR ELECTRICAL AND MAGNETIC UNIFORMITY AND SKEW TUNING IN PLASMA PROCESSING REACTORS
    4.
    发明申请
    SYSTEMS AND METHODS FOR ELECTRICAL AND MAGNETIC UNIFORMITY AND SKEW TUNING IN PLASMA PROCESSING REACTORS 审中-公开
    等离子体加工反应器中电气和磁性均匀性和钻孔调谐的系统和方法

    公开(公告)号:US20160027667A1

    公开(公告)日:2016-01-28

    申请号:US14755646

    申请日:2015-06-30

    Abstract: In some embodiments, a plasma processing apparatus includes a processing chamber to process a substrate; a mounting surface defined within the processing chamber to support a substrate disposed within the processing chamber; a showerhead disposed within the processing chamber and aligned so as to face the mounting surface, the showerhead defining a plurality of orifices to introduce a process gas into the processing chamber toward a substrate disposed within the processing chamber; and one or more magnets supported by the showerhead and arranged so that a radial component of a magnetic field applied by each of the one or more magnets has a higher flux density proximate a first region corresponding to an edge surface region of a substrate when disposed within the processing chamber than at a second region corresponding to an interior surface region of a substrate when disposed within the processing chamber.

    Abstract translation: 在一些实施例中,等离子体处理装置包括处理基板的处理室; 限定在所述处理室内的安装表面,以支撑设置在所述处理室内的衬底; 喷头,其设置在所述处理室内并且对准所述安装表面,所述喷头限定多个孔口,以将处理气体引入所述处理室内朝向设置在所述处理室内的基板; 以及由喷头支撑的一个或多个磁体,并且被布置成使得由一个或多个磁体中的每一个施加的磁场的径向分量在靠近基板的边缘表面区域的第一区域附近具有较高的通量密度, 所述处理室比在处于所述处理室内时对应于衬底的内表面区域的第二区域处。

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