公开(公告)号：US20230072594A1

公开(公告)日：2023-03-09

申请号：US17985764

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： JAEYONG CHO ,  VIJAY D. PARKHE ,  HAITAO WANG ,  KARTIK RAMASWAMY ,  CHUNLEI ZHANG

IPC: H01L21/683 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32

Abstract: An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

公开(公告)号：US20160116518A1

公开(公告)日：2016-04-28

申请号：US14924954

申请日：2015-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： HAITAO WANG ,  LAWRENCE WONG ,  KARTIK RAMASWAMY ,  CHUNLEI ZHANG

IPC: G01R29/24 ,  H01L21/683

CPC classification number: G01R29/24 ,  H01L21/67253 ,  H01L21/6833

Abstract: Methods and apparatus for measurement of a surface charge profile of an electrostatic chuck are provided herein. In some embodiments, an apparatus for measurement of a surface charge profile of an electrostatic chuck includes: an electrostatic charge sensor disposed on a substrate to obtain data indicative of an electrostatic charge on an electrostatic chuck; and a transmitter disposed on the substrate and having an input in communication with an output of the electrostatic charge sensor to transmit the data.

Abstract translation: 本文提供了用于测量静电卡盘的表面电荷分布的方法和装置。 在一些实施例中，用于测量静电卡盘的表面电荷分布的装置包括：静电电荷传感器，设置在基板上以获得指示静电卡盘上的静电电荷的数据; 以及发射器，其布置在所述衬底上并且具有与所述静电电荷传感器的输出端相通的输入端以传输所述数据。

公开(公告)号：US20160027667A1

公开(公告)日：2016-01-28

申请号：US14755646

申请日：2015-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： S. M. REZA SADJADI ,  HAITAO WANG ,  JIE ZHOU ,  TZA-JING GUNG ,  CHUNLEI ZHANG ,  FERNANDO M. SILVEIRA

IPC: H01L21/67 ,  C23C16/505 ,  C23C16/458 ,  C23C16/44 ,  H01J37/32 ,  C23C16/455

CPC classification number: H01L21/67069 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32669

Abstract: In some embodiments, a plasma processing apparatus includes a processing chamber to process a substrate; a mounting surface defined within the processing chamber to support a substrate disposed within the processing chamber; a showerhead disposed within the processing chamber and aligned so as to face the mounting surface, the showerhead defining a plurality of orifices to introduce a process gas into the processing chamber toward a substrate disposed within the processing chamber; and one or more magnets supported by the showerhead and arranged so that a radial component of a magnetic field applied by each of the one or more magnets has a higher flux density proximate a first region corresponding to an edge surface region of a substrate when disposed within the processing chamber than at a second region corresponding to an interior surface region of a substrate when disposed within the processing chamber.

Abstract translation: 在一些实施例中，等离子体处理装置包括处理基板的处理室; 限定在所述处理室内的安装表面，以支撑设置在所述处理室内的衬底; 喷头，其设置在所述处理室内并且对准所述安装表面，所述喷头限定多个孔口，以将处理气体引入所述处理室内朝向设置在所述处理室内的基板; 以及由喷头支撑的一个或多个磁体，并且被布置成使得由一个或多个磁体中的每一个施加的磁场的径向分量在靠近基板的边缘表面区域的第一区域附近具有较高的通量密度， 所述处理室比在处于所述处理室内时对应于衬底的内表面区域的第二区域处。

公开(公告)号：US20200294771A1

公开(公告)日：2020-09-17

申请号：US16777220

申请日：2020-01-30

Applicant: APPLIED MATERIALS, INC.

Inventor： DAISUKE SHIMIZU ,  TAIKI HATAKEYAMA ,  SEAN S. KANG ,  KATSUMASA KAWASAKI ,  CHUNLEI ZHANG

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US20130180963A1

公开(公告)日：2013-07-18

申请号：US13732621

申请日：2013-01-02

Applicant: APPLIED MATERIALS, INC.

Inventor： CHUNLEI ZHANG ,  RICHARD FOVELL ,  EZRA ROBERT GOLD ,  AJIT BALAKRISHNA ,  JAMES P. CRUSE

IPC: H05B7/18 ,  H01L21/67

CPC classification number: H05B7/18 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069

Abstract: Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

Abstract translation: 本文提供了用于调节等离子体增强处理室中的组分的温度的方法和装置。 在一些实施例中，用于处理衬底的装置包括处理室和RF源，以提供RF能量以在处理室中形成等离子体。 一个部件设置在处理室中，以便在形成时被等离子体加热。 加热器被配置为加热部件并且热交换器被配置成从部件移除热量。 冷却器通过具有设置在其中的开/关流量控制阀的第一流动管道和旁路循环来耦合到热交换器，旁路回路绕过流量控制阀，其中旁路回路具有设置在其中的流量比阀。