Disposable barrier technique for through wafer etching in MEMS
    1.
    发明申请
    Disposable barrier technique for through wafer etching in MEMS 审中-公开
    在MEMS中通过晶片蚀刻的一次性屏障技术

    公开(公告)号:US20040087054A1

    公开(公告)日:2004-05-06

    申请号:US10274403

    申请日:2002-10-18

    CPC classification number: B81C99/0065 B81C1/00896 B81C2201/0132

    Abstract: Disclosed are methods of plasma etching through a substrate while preventing rapid leakage of heat transfer fluid during the etch process, protecting process chamber hardware underlying said substrate, and separating components within said substrate while maintaining said components in a position relative to other components within said substrate. The method involves application of a disposable protective barrier layer to the backside of the substrate prior to etching and then removing the barrier layer subsequent to etching.

    Abstract translation: 公开了等离子体蚀刻通过衬底的方法,同时防止在蚀刻过程期间传热流体的快速泄漏,保护所述衬底下面的处理室硬件,以及分离所述衬底内的部件,同时将所述部件保持在相对于所述衬底内的其它部件的位置 。 该方法包括在蚀刻之前将一次性保护性阻挡层施加到衬底的背面,然后在蚀刻之后去除阻挡层。

    Integrated method for release and passivation of MEMS structures
    2.
    发明申请
    Integrated method for release and passivation of MEMS structures 失效
    MEMS结构的释放和钝化的集成方法

    公开(公告)号:US20040033639A1

    公开(公告)日:2004-02-19

    申请号:US10435757

    申请日:2003-05-09

    Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.

    Abstract translation: 本文公开了一种改进疏水性自组装单层(SAM)涂层到MEMS结构表面的粘附性的方法,以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体处理MEMS结构的表面。 处理氧化表面,然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在,使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法,其可以被调整为在单室处理系统或多室处理系统中进行。

    Integrated method for release and passivation of MEMS structures
    3.
    发明申请
    Integrated method for release and passivation of MEMS structures 失效
    MEMS结构的释放和钝化的集成方法

    公开(公告)号:US20030166342A1

    公开(公告)日:2003-09-04

    申请号:US10300970

    申请日:2002-11-20

    Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.

    Abstract translation: 本文公开了一种改进疏水性自组装单层(SAM)涂层到MEMS结构表面的粘附性的方法,以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体来预处理MEMS结构的表面。 处理氧化表面,然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在,使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法。

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