公开(公告)号：US20030219986A1

公开(公告)日：2003-11-27

申请号：US10267824

申请日：2002-10-08

Applicant: Applied Materials, Inc.

Inventor： Michael B. Rattner ,  Rolf A. Guenther ,  Jeffrey D. Chinn

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/68735 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/68757

Abstract: A substrate carrier for carrying one or more substrates comprises a bottom surface, a top surface opposed to the bottom surface, one or more recesses formed into the top surface, each of the one or more recesses having a support surface that defines a support region for a substrate. The support region is adapted to contact a bottom of the substrate. The support region may have a thickness less than a depth of the one or more recesses. The support region may comprise a porous material to permit thermal fluid to percolate through the support region.

Abstract translation: 用于承载一个或多个衬底的衬底载体包括底表面，与底表面相对的顶表面，形成在顶表面中的一个或多个凹槽，所述一个或多个凹槽中的每一个具有支撑表面，该支撑表面限定用于 底物。 支撑区域适于接触基底的底部。 支撑区域可以具有小于一个或多个凹部的深度的厚度。 支撑区域可以包括多孔材料，以允许热流体渗透通过支撑区域。

公开(公告)号：US20030217693A1

公开(公告)日：2003-11-27

申请号：US10267987

申请日：2002-10-08

Applicant: Applied Materials, Inc.

Inventor： Michael B. Rattner ,  Rolf A. Guenther ,  Jeffrey D. Chinn

IPC: B05C013/00 ,  B05C021/00

CPC classification number: H01L21/68721 ,  H01L21/67075 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68785

Abstract: A substrate support assembly for processing a substrate in a processing chamber comprises a substrate carrier having a bottom surface positioned in contact with a substrate support. The substrate carrier has a recess formed into a top surface. The recess has a support surface and a support region between the bottom surface and the support surface. A shadow ring is positioned proximate the substrate carrier to partially shield the support surface of the substrate carrier.

Abstract translation: 用于处理处理室中的衬底的衬底支撑组件包括具有与衬底支撑件接触的底表面的衬底载体。 衬底载体具有形成为顶表面的凹部。 凹部具有支撑表面和底表面与支撑表面之间的支撑区域。 阴影环定位成靠近衬底载体以部分地屏蔽衬底载体的支撑表面。

公开(公告)号：US20040087054A1

公开(公告)日：2004-05-06

申请号：US10274403

申请日：2002-10-18

Applicant: Applied Materials, Inc.

Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper

IPC: H01L021/46 ,  H01L021/301 ,  H01L021/00 ,  H01L021/78

CPC classification number: B81C99/0065 ,  B81C1/00896 ,  B81C2201/0132

Abstract: Disclosed are methods of plasma etching through a substrate while preventing rapid leakage of heat transfer fluid during the etch process, protecting process chamber hardware underlying said substrate, and separating components within said substrate while maintaining said components in a position relative to other components within said substrate. The method involves application of a disposable protective barrier layer to the backside of the substrate prior to etching and then removing the barrier layer subsequent to etching.

Abstract translation: 公开了等离子体蚀刻通过衬底的方法，同时防止在蚀刻过程期间传热流体的快速泄漏，保护所述衬底下面的处理室硬件，以及分离所述衬底内的部件，同时将所述部件保持在相对于所述衬底内的其它部件的位置 。 该方法包括在蚀刻之前将一次性保护性阻挡层施加到衬底的背面，然后在蚀刻之后去除阻挡层。

公开(公告)号：US20040033639A1

公开(公告)日：2004-02-19

申请号：US10435757

申请日：2003-05-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung ,  Claes H. Bjorkman

IPC: H01L021/00

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.

Abstract translation: 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法，其可以被调整为在单室处理系统或多室处理系统中进行。

公开(公告)号：US20030166342A1

公开(公告)日：2003-09-04

申请号：US10300970

申请日：2002-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung

IPC: H01L021/461 ,  H01L021/31 ,  H01L021/302 ,  H01L021/469

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.

Abstract translation: 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体来预处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法。