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公开(公告)号:US10187966B2
公开(公告)日:2019-01-22
申请号:US15147974
申请日:2016-05-06
Applicant: Applied Materials, Inc.
Inventor: Rongping Wang , Jibing Zeng , David Muquing Hou , Michael S. Cox , Zheng Yuan , James L'Heureux
Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.
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公开(公告)号:US10757797B2
公开(公告)日:2020-08-25
申请号:US16206276
申请日:2018-11-30
Applicant: Applied Materials, Inc.
Inventor: Rongping Wang , Jibing Zeng , David Muquing Hou , Michael S. Cox , Zheng Yuan , James L'Heureux
IPC: H05H1/24 , H01J37/32 , H05H1/46 , C23C16/507 , C23C16/44
Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.
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公开(公告)号:US09767990B2
公开(公告)日:2017-09-19
申请号:US15188504
申请日:2016-06-21
Applicant: APPLIED MATERIALS, INC.
Inventor: Jibing Zeng , Brian T. West , Rongping Wang , Manoj A. Gajendra
CPC classification number: H01J37/3211 , H01J37/32467 , H01J37/32522 , H01J37/32568 , H01J37/32807 , H01J37/32834 , H01J37/32844 , H05H1/2406 , H05H1/30 , H05H2001/2468 , Y02C20/30
Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube configured to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and a radio frequency (RF) coil wound about an outer surface of the conical sidewall of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.
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公开(公告)号:US09378928B2
公开(公告)日:2016-06-28
申请号:US14445965
申请日:2014-07-29
Applicant: APPLIED MATERIALS, INC.
Inventor: Jibing Zeng , Brian T. West , Rongping Wang , Manoj A. Gajendra
CPC classification number: H01J37/3211 , H01J37/32467 , H01J37/32522 , H01J37/32568 , H01J37/32807 , H01J37/32834 , H01J37/32844 , H05H1/2406 , H05H1/30 , H05H2001/2468 , Y02C20/30
Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.
Abstract translation: 提供了用于处理基板处理系统的管道中的气体的装置。 在一些实施例中,用于处理衬底处理系统的导管中的气体的装置包括:电介质管,其被耦合到衬底处理系统的导管,以允许气体流过电介质管,其中介电管具有 锥形侧壁; 以及围绕所述电介质管的所述锥形侧壁的外表面缠绕的RF线圈,所述RF线圈具有第一端以向所述RF线圈提供RF输入,所述RF线圈的所述第一端靠近所述电介质的第一端设置 管和设置在电介质管的第二端附近的第二端。 在一些实施例中,RF线圈是中空的并且包括将中空RF线圈耦合到冷却剂供应的冷却剂配件。
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