公开(公告)号：US20230253186A1

公开(公告)日：2023-08-10

申请号：US18133216

申请日：2023-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanhong CHEN ,  Arkaprava DAN ,  Joseph AUBUCHON ,  Kyoung Ha KIM ,  Philip A. KRAUS

IPC: H01J37/32 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  C23C16/511

CPC classification number: H01J37/32201 ,  C23C16/34 ,  C23C16/511 ,  H01L21/28568 ,  H01L21/76841 ,  H01J2237/3321

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.