公开(公告)号：US20210351071A1

公开(公告)日：2021-11-11

申请号：US16871400

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Wenyi LIU ,  Wei TANG ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Yong WU ,  Jianqiu GUO ,  Arkaprava DAN ,  Mandyam SRIRAM

IPC: H01L21/768 ,  H01L21/285

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

公开(公告)号：US20230253186A1

公开(公告)日：2023-08-10

申请号：US18133216

申请日：2023-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanhong CHEN ,  Arkaprava DAN ,  Joseph AUBUCHON ,  Kyoung Ha KIM ,  Philip A. KRAUS

IPC: H01J37/32 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  C23C16/511

CPC classification number: H01J37/32201 ,  C23C16/34 ,  C23C16/511 ,  H01L21/28568 ,  H01L21/76841 ,  H01J2237/3321

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.

公开(公告)号：US20230245925A1

公开(公告)日：2023-08-03

申请号：US18126048

申请日：2023-03-24

Applicant: Applied Materials, Inc.

Inventor： Wenyi LIU ,  Wei TANG ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Yong WU ,  Jianqiu GUO ,  Arkaprava DAN ,  Mandyam SRIRAM

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28568

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.