公开(公告)号：US20230253186A1

公开(公告)日：2023-08-10

申请号：US18133216

申请日：2023-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanhong CHEN ,  Arkaprava DAN ,  Joseph AUBUCHON ,  Kyoung Ha KIM ,  Philip A. KRAUS

IPC: H01J37/32 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  C23C16/511

CPC classification number: H01J37/32201 ,  C23C16/34 ,  C23C16/511 ,  H01L21/28568 ,  H01L21/76841 ,  H01J2237/3321

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.

公开(公告)号：US20250063797A1

公开(公告)日：2025-02-20

申请号：US18762053

申请日：2024-07-02

Applicant: Applied Materials, Inc.

Inventor： Kyoung Ha KIM ,  Veeraraghavan S. BASKER ,  Byeong Chan LEE ,  Andrew YEOH

IPC: H01L29/417 ,  H01L21/283 ,  H01L21/3065 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/775 ,  H01L29/786

Abstract: A method of forming a portion of a gate-all-around field-effect transistor includes performing a selective deposition process to form selective cap layers at bottoms of contact trenches formed within portions of a substrate isolated by shallow trench isolations (STIs), wherein the contact trenches each interface with an S/D epitaxial (epi) layer with an extension region, performing a substrate angled etch process to etch sidewalls of the contact trenches, enlarging top critical dimension (CD) of the contact trenches, performing a substrate selective removal plasma (SRP) etch process to isotropically etch the substrate within the contact trenches, performing a recess fill process to fill the contact trenches with dielectric layers, performing an inter-layer dielectric (ILD) recess process to partially remove the substrate between the dielectric layers within the contact trenches and form an ILD recess, and performing a substrate isotropic etch process to partially remove the substrate within the ILD recess.