公开(公告)号：US20160133459A1

公开(公告)日：2016-05-12

申请号：US14934547

申请日：2015-11-06

Applicant: APPLIED MATERIALS, INC.

Inventor： JUNGMIN KO ,  SEAN KANG ,  KWANG-SOO KIM ,  OLIVIER LUERE

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/31116

Abstract: A method of processing a substrate includes depositing an oxide material on a substrate having a first region, a second region and a plurality of features, wherein the first region has a high feature density and the second region has a low feature density; and controlling a ratio of an etch rate of the oxide material in the first region to an etch rate of the oxide material in the second region by forming an ammonium hexafluorosilicate ((NH4)2SiF6) layer having a first thickness atop the oxide material in the first region and having a second thickness atop the oxide material in the second region.

Abstract translation: 一种处理衬底的方法包括在具有第一区域，第二区域和多个特征的衬底上沉积氧化物材料，其中第一区域具有高特征密度，第二区域具有低特征密度; 以及通过在所述第二区域中形成具有在所述氧化物材料的顶部的第一厚度的六氟硅酸铵（（NH 4）2 SiF 6））来控制所述第一区域中的氧化物材料的蚀刻速率与所述氧化物材料的蚀刻速率的比率 并且在第二区域中具有位于氧化物材料上方的第二厚度。