公开(公告)号：US20160133459A1

公开(公告)日：2016-05-12

申请号：US14934547

申请日：2015-11-06

Applicant: APPLIED MATERIALS, INC.

Inventor： JUNGMIN KO ,  SEAN KANG ,  KWANG-SOO KIM ,  OLIVIER LUERE

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/31116

Abstract: A method of processing a substrate includes depositing an oxide material on a substrate having a first region, a second region and a plurality of features, wherein the first region has a high feature density and the second region has a low feature density; and controlling a ratio of an etch rate of the oxide material in the first region to an etch rate of the oxide material in the second region by forming an ammonium hexafluorosilicate ((NH4)2SiF6) layer having a first thickness atop the oxide material in the first region and having a second thickness atop the oxide material in the second region.

Abstract translation: 一种处理衬底的方法包括在具有第一区域，第二区域和多个特征的衬底上沉积氧化物材料，其中第一区域具有高特征密度，第二区域具有低特征密度; 以及通过在所述第二区域中形成具有在所述氧化物材料的顶部的第一厚度的六氟硅酸铵（（NH 4）2 SiF 6））来控制所述第一区域中的氧化物材料的蚀刻速率与所述氧化物材料的蚀刻速率的比率 并且在第二区域中具有位于氧化物材料上方的第二厚度。

公开(公告)号：US20150371889A1

公开(公告)日：2015-12-24

申请号：US14310607

申请日：2014-06-20

Applicant: APPLIED MATERIALS, INC.

Inventor： HUN SANG KIM ,  WONMO AHN ,  SHINICHI KOSEKI ,  JINHAN CHOI ,  SEAN KANG

IPC: H01L21/76 ,  H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/30655 ,  C23C16/30 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32541 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32899 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/6719 ,  H01L21/68785 ,  H01L21/76224

Abstract: Methods for processing a substrate include (a) providing a substrate comprising a silicon germanium layer and a patterned mask layer atop the silicon germanium layer to define a feature in the silicon germanium layer; (b) exposing the substrate to a first plasma formed from a first process gas to etch a feature into the silicon germanium layer; (c) subsequently exposing the substrate to a second plasma formed from a second process gas to form an oxide layer on a sidewall and a bottom of the feature; (d) exposing the substrate to a third plasma formed from a third process gas to etch the oxide layer from the bottom of the feature; and (e) repeating (b)-(d) to form the feature in the first layer to a desired depth, wherein the first process gas, the second process gas and the third process gas are not the same.

Abstract translation: 用于处理衬底的方法包括（a）提供包括硅锗层的衬底和在硅锗层顶上的图案化掩模层以限定硅锗层中的特征; （b）将衬底暴露于由第一工艺气体形成的第一等离子体，以将特征蚀刻到硅锗层中; （c）随后将所述衬底暴露于由第二工艺气体形成的第二等离子体，以在所述特征的侧壁和底部上形成氧化物层; （d）将所述衬底暴露于由第三工艺气体形成的第三等离子体以从所述特征的底部蚀刻所述氧化物层; 和（e）重复（b） - （d）以将第一层中的特征形成期望的深度，其中第一处理气体，第二处理气体和第三处理气体不相同。