公开(公告)号：US20170002461A1

公开(公告)日：2017-01-05

申请号：US15201019

申请日：2016-07-01

申请人： APPLIED MATERIALS, INC.

发明人： William JOHANSON ,  Kirankumar SAVANDAIAH ,  Adolph Miller ALLEN ,  Xin WANG ,  Prashant PRABHU

IPC分类号： C23C16/455

CPC分类号： C23C14/3407 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3488

摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support designed to support a substrate having a given width, including: an annular band configured to rest on a lower ledge of the substrate support; an inner lip extending upwardly from an inner edge of the annular band, wherein an inner surface of the inner lip and an inner surface of the annular band together form a central opening having a width that is less than the given width, and wherein a depth between an upper surface of the annular band and an upper surface of the inner lip is between about 24 mm and about 38 mm; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

摘要翻译： 本文提供了具有加工套件和加工腔室的实施例。 在一些实施例中，处理套件包括沉积环，其被配置为设置在设计成支撑具有给定宽度的衬底的衬底支撑件上，包括：环形带，被配置为搁置在衬底支撑件的下凸缘上; 从所述环形带的内边缘向上延伸的内唇缘，其中所述内唇缘的内表面和所述环形带的内表面一起形成具有小于给定宽度的宽度的中心开口，并且其中， 在环形带的上表面和内唇缘的上表面之间的距离在约24mm和约38mm之间; 设置在所述环形带的径向外侧的通道; 以及向外延伸并设置在通道的径向外侧的外唇缘。

公开(公告)号：US20170098530A1

公开(公告)日：2017-04-06

申请号：US15287675

申请日：2016-10-06

申请人： APPLIED MATERIALS, INC.

发明人： William JOHANSON ,  Kirankumar SAVANDAIAH ,  Xin WANG ,  Prashant PRABHU

IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/35

CPC分类号： H01J37/3441 ,  C23C14/3407 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32642 ,  H01J37/32651

摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes: a one-piece process kit shield having a cylindrical body having an upper portion and a lower portion; an adapter section extending radially outward and having a resting surface to support the one-piece process kit shield on walls of a chamber and a sealing surface on which a chamber lid rests to seal off an inner volume of the chamber when the one-piece process kit shield is placed in the chamber; a heat transfer channel extending through the adapter section; and a protruding section extending radially inward from the lower portion; a resting bracket having an upper portion coupled to the adapter section and a lower portion extending radially inward; a cover ring disposed beneath the protruding section; and a deposition ring disposed beneath the cover ring.

公开(公告)号：US20170018413A1

公开(公告)日：2017-01-19

申请号：US15280075

申请日：2016-09-29

申请人： Applied Materials, Inc.

发明人： Lara HAWRYLCHAK ,  Kirankumar SAVANDAIAH

IPC分类号： H01J37/34 ,  H01L21/687 ,  H01J37/32

CPC分类号： H01J37/3411 ,  C23C14/34 ,  C23C14/564 ,  C23C16/4585 ,  H01J37/32477 ,  H01J37/32623 ,  H01L21/68714 ,  H01L21/68721 ,  Y10T428/12528

摘要： Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.

摘要翻译： 本发明的实施方案通常提供用于物理沉积室（PVD）室的工艺组件。 在一个实施例中，处理套件提供可调整的工艺间隔，在盖环和屏蔽之间居中，并且在盖环和屏蔽之间的受控气流有助于均匀的气体分布，这促进了更大的工艺均匀性和重复性以及更长的室部件 使用寿命。

公开(公告)号：US20140061040A1

公开(公告)日：2014-03-06

申请号：US14042177

申请日：2013-09-30

申请人： Applied Materials, Inc.

发明人： Lara HAWRYLCHAK ,  Kirankumar SAVANDAIAH

IPC分类号： C23C14/34

CPC分类号： H01J37/3411 ,  C23C14/34 ,  C23C14/564 ,  C23C16/4585 ,  H01J37/32477 ,  H01J37/32623 ,  H01L21/68714 ,  H01L21/68721 ,  Y10T428/12528

摘要： Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.

摘要翻译： 本发明的实施方案通常提供用于物理沉积室（PVD）室的工艺组件。 在一个实施例中，处理套件提供可调整的工艺间隔，在盖环和屏蔽之间居中，并且在盖环和屏蔽之间的受控气流有助于均匀的气体分布，这促进了更大的工艺均匀性和重复性以及更长的室部件 使用寿命。

公开(公告)号：US20170076924A1

公开(公告)日：2017-03-16

申请号：US15260190

申请日：2016-09-08

申请人： APPLIED MATERIALS, INC.

发明人： William JOHANSON ,  Kirankumar SAVANDAIAH

IPC分类号： H01J37/34 ,  C23C14/54 ,  H01J37/32 ,  C23C14/35

CPC分类号： H01J37/3441 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32513 ,  H01J37/32642 ,  H01J37/32651 ,  H01J37/3405

摘要： Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield configured for use in a processing chamber for processing a substrate having a given diameter includes: a cylindrical body having an upper portion and a lower portion; an annular heat transfer channel disposed within the upper portion; and a cover ring section extending radially inward from the lower portion and having an annular leg extending from a bottom surface of the cover ring section, wherein the annular leg is configured to interface with a deposition ring to form a tortuous path between the bottom surface and the deposition ring.

摘要翻译： 本文提供了处理套件屏蔽和结合相同处理室的实施例。 在一些实施例中，被配置用于处理具有给定直径的基板的处理室中的一件式处理套件屏蔽包括：具有上部和下部的圆柱体; 设置在所述上​​部内的环状传热通道; 以及覆盖环部分，其从所述下部部分径向向内延伸并且具有从所述盖环部分的底表面延伸的环形腿部，其中所述环形腿部被配置为与沉积环相互接合以在所述底部表面和 沉积环。

公开(公告)号：US20170029941A1

公开(公告)日：2017-02-02

申请号：US15237414

申请日：2016-08-15

申请人： Applied Materials, Inc.

发明人： Adolph Miller ALLEN ,  Lara HAWRYLCHAK ,  Zhigang XIE ,  Muhammad M. RASHEED ,  Rongjun WANG ,  Xianmin TANG ,  Zhendong LIU ,  Tza-Jing GUNG ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Michael S. COX ,  Donny YOUNG ,  Kirankumar SAVANDAIAH ,  Zhenbin GE

IPC分类号： C23C14/56 ,  H01J37/32 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/54

摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

摘要翻译： 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US20140166480A1

公开(公告)日：2014-06-19

申请号：US14187585

申请日：2014-02-24

申请人： Applied Materials, Inc.

发明人： Lara HAWRYLCHAK ,  Kirankumar SAVANDAIAH

IPC分类号： C23C14/34

CPC分类号： H01J37/3411 ,  C23C14/34 ,  C23C14/564 ,  C23C16/4585 ,  H01J37/32477 ,  H01J37/32623 ,  H01L21/68714 ,  H01L21/68721 ,  Y10T428/12528

摘要： Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.