公开(公告)号：US20200211883A1

公开(公告)日：2020-07-02

申请号：US16286273

申请日：2019-02-26

Applicant: APPLIED MATERIALS, INC.

Inventor： SRISKANTHARAJAH THIRUNAVUKARASU ,  ARVIND SUNDARRAJAN ,  KARRTHIK PARATHITHASAN ,  QI JIE PENG ,  MANORAJH ARUNAKIRI

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/56

Abstract: Methods for bonding and de-bonding a thin substrate film to a carrier plate are provided herein. In some embodiments, a method of processing a semiconductor substrate includes applying a polymer layer that is non-adhesive to a carrier plate formed of a dielectric material. A second layer is then applied to the polymer layer. One or more redistribution layers are then formed on the second layer. The second layer is then separated from the carrier plate via at least one of magnetic induction heating, infrared exposure, or electrostatic repulsion.

公开(公告)号：US20210057238A1

公开(公告)日：2021-02-25

申请号：US16545752

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： CHIN WEI TAN ,  QI JIE PENG ,  FANG JIE LIM ,  PRAYUDI LIANTO ,  SRISKANTHARAJAH THIRUNAVUKARASU ,  ARVIND SUNDARRAJAN ,  JUN-LIANG SU

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes heating the substrate with an epoxy layer to at least a glass transition temperature of the epoxy layer while allowing the substrate to expand; subsequently constraining the substrate with a clamping force exerted towards the substrate from a top direction by applying a high pressure gas to the substrate and from a bottom direction by applying a vacuum pressure to the substrate; and rapidly cooling the substrate while the substrate is constrained.

公开(公告)号：US20200306931A1

公开(公告)日：2020-10-01

申请号：US16363009

申请日：2019-03-25

Applicant: APPLIED MATERIALS, INC.

Inventor： PRAYUDI LIANTO ,  PENG SUO ,  SHIH-CHAO HUNG ,  PIN GIAN GAN ,  CHUN YU TO ,  PERIYA GOPALAN ,  KOK SEONG TEO ,  LIT PING LAM ,  ANDY LOO ,  PANGYEN ONG ,  DAVID P. SURDOCK ,  KEITH YPMA ,  BRIAN WILLIAMS ,  SCOTT OSTERMAN ,  MARVIN L. BERNT ,  MUHAMMAD NORHAZWAN ,  SAMUEL GOPINATH ,  MUHAMMAD AZIM ,  GUAN HUEI SEE ,  QI JIE PENG ,  SRISKANTHARAJAH THIRUNAVUKARASU ,  ARVIND SUNDARRAJAN

IPC: B24B57/00 ,  H01L21/02 ,  B24B37/34

Abstract: Methods and apparatus for removing particles from a substrate surface after a chemical mechanical polish. In some embodiments, the apparatus may include a manifold configured to receive and atomize a fluid and at least one spray nozzle mounted to the manifold and configured to spray the atomized fluid in a divergent spray pattern such that the substrate surface is cleansed when impinged by spray from the at least one spray nozzle, wherein the at least one spray nozzle sprays the atomized fluid at a pressure of approximately 30 psi to approximately 2500 psi.