公开(公告)号：US20240379360A1

公开(公告)日：2024-11-14

申请号：US18196187

申请日：2023-05-11

Applicant: Applied Materials, Inc.

Inventor： Shiva RAI

IPC: H01L21/04 ,  H01L21/02 ,  H01L29/66

Abstract: A method for forming an ohmic contact of a semiconductor structure leverages physical vapor deposition films. In some embodiments, the method may comprise forming at least one recess in a III-V semiconductor material on a substrate, forming a mask on the semiconductor material where at least the recess is left unmasked, depositing a contact transition layer of a metal nitride material in the recess using a physical vapor deposition (PVD) process, and forming a metal layer on the contact transition layer to form the ohmic contact. The ohmic contact may be formed for use in a high electron mobility transistor (HEMT), a light emitting diode (LED), and/or laser-based structures and the like. The contact transition layer may be doped or undoped material depending on the metal nitride variant used as the contact transition layer material.

公开(公告)号：US20220216363A1

公开(公告)日：2022-07-07

申请号：US17142752

申请日：2021-01-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Shiva RAI

IPC: H01L33/00

Abstract: A method for forming a light emitting diode (LED) uses aluminum-based material layers and oxidation during the LED formation. In some embodiments, the method may include forming an n-type layer of the LED on a substrate, forming at least one sidewall restriction layer of the LED on the substrate with the sidewall restriction layer comprising an aluminum-based material, forming a quantum well layer of the LED on the substrate, forming a p-type layer of the LED on the substrate, exposing the substrate to water vapor, and heating the substrate to oxidize at least an outer portion of the electron blocking layer. The aluminum-based material may include aluminum indium nitride or aluminum gallium arsenide.

公开(公告)号：US20220181160A1

公开(公告)日：2022-06-09

申请号：US17116335

申请日：2020-12-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Shiva RAI ,  Alfredo GRANADOS

IPC: H01L21/306 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/24 ,  H01L33/44 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a photonic device are provided herein. For example, methods include etching, using a plasma etch process that uses a first gas, a first epitaxial layer of material of the photonic device comprising a base layer comprising at least one of silicon, germanium, sapphire, aluminum indium gallium arsenide (AlxInyGa1-x-yAs), aluminum indium gallium phosphide (AlxInyGa1-x-yP), aluminum indium gallium nitride (AlxInyGa1-x-yN), aluminum indium gallium arsenide phosphide (AlxInyGa1-x-yAszP1-z), depositing, using a plasma deposition process that uses a second gas different from the first gas, a first dielectric layer over etched sidewalls of the first epitaxial layer of material, etching, using the first gas, a second epitaxial layer of material of the photonic device, and depositing, using the second gas, a second dielectric layer over etched sidewalls of the second epitaxial layer of material.