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公开(公告)号:US20210238745A1
公开(公告)日:2021-08-05
申请号:US16786292
申请日:2020-02-10
Applicant: APPLIED MATERIALS, INC.
Inventor: TIMOTHY JOSEPH FRANKLIN , JOSEPH F. SOMMERS , CARLATON WONG , REYN WAKABAYASHI , JOSEPH FREDERICK BEHNKE
IPC: C23C16/455
Abstract: A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a connector having a circular configuration and formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the connector is bonded to at least one of the inner portion and outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the connector.
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公开(公告)号:US20210238746A1
公开(公告)日:2021-08-05
申请号:US16823898
申请日:2020-03-19
Applicant: APPLIED MATERIALS, INC.
Inventor: TIMOTHY JOSEPH FRANKLIN , JOSEPH F. SOMMERS , CARLATON WONG , REYN WAKABAYASHI , Joseph Frederick BEHNKE
IPC: C23C16/455
Abstract: A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si), wherein a bonding layer is provided on a back surface of at least one of the inner portion or outer portion; a backing plate formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the backing plate is bonded to at least one of the back surface of at least one of the inner portion or outer portion of the gas distribution plate.
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公开(公告)号:US20180240692A1
公开(公告)日:2018-08-23
申请号:US15955375
申请日:2018-04-17
Applicant: APPLIED MATERIALS, INC.
Inventor: PHILIP ALLAN KRAUS , TIMOTHY JOSEPH FRANKLIN
Abstract: Embodiments include a real time etch rate sensor and methods of for using a real time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. The resonant system may include a resonating body, a first electrode formed over a first surface of the resonating body, a second electrode formed over a second surface of the resonating body, and a sacrificial layer formed over the first electrode. In an embodiment, at least a portion of the first electrode is not covered by the sacrificial layer. In an embodiment, the conductive housing may secure the resonant system. Additionally, the conductive housing contacts the first electrode, and at least a portion of an interior edge of the conductive housing may be spaced away from the sacrificial layer.
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公开(公告)号:US20210285101A1
公开(公告)日:2021-09-16
申请号:US16816672
申请日:2020-03-12
Applicant: APPLIED MATERIALS, INC.
Inventor: TIMOTHY JOSEPH FRANKLIN , RAJINDER DHINDSA , DANIEL SANG BYUN , CARLATON WONG
Abstract: An apparatus for processing substrates that includes a process chamber with a process volume and a conductance liner surrounding the process volume wherein the conductance liner has at least one fixed portion and a movable portion. The movable portion is configured to expose a substrate transfer slot in a wall of the process chamber. The apparatus also includes a lifting assembly with an actuator attached to the movable portion of the conductance liner. The lifting assembly is configured to move the movable portion of the conductance liner in a vertical direction to expose the substrate transfer slot.
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公开(公告)号:US20210238744A1
公开(公告)日:2021-08-05
申请号:US16780855
申请日:2020-02-03
Applicant: APPLIED MATERIALS, INC.
Inventor: TIMOTHY JOSEPH FRANKLIN , JOSEPH F. SOMMERS , CARLATON WONG , REYN WAKABAYASHI
IPC: C23C16/455 , H01J37/32
Abstract: A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a first ring body formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the first ring body is bonded to and extends from one of the inner portion or outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the first ring body.
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