公开(公告)号：US20240102876A1

公开(公告)日：2024-03-28

申请号：US18531478

申请日：2023-12-06

Applicant: Applied Materials, Inc.

Inventor： CHUANG-CHIA LIN ,  DAVID PETERSON ,  PHILIP ALLAN KRAUS ,  AMIR BAYATI

IPC: G01L19/00 ,  H03H9/02 ,  H03H9/145

CPC classification number: G01L19/0092 ,  H03H9/02015 ,  H03H9/02574 ,  H03H9/14502 ,  G01N29/022 ,  G01N2291/014

Abstract: Embodiments disclosed herein include diagnostic substrates and methods of using the diagnostic substrates to extract plasma parameters. In an embodiment, a diagnostic substrate comprises a substrate and an array of resonators across the substrate. In an embodiment, the array of resonators comprises at least a first resonator with a first structure and a second resonator with a second structure. In an embodiment, the first structure is different than the second structure.

公开(公告)号：US20180240692A1

公开(公告)日：2018-08-23

申请号：US15955375

申请日：2018-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： PHILIP ALLAN KRAUS ,  TIMOTHY JOSEPH FRANKLIN

IPC: H01L21/67 ,  H01L21/66 ,  G01H13/00

Abstract: Embodiments include a real time etch rate sensor and methods of for using a real time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. The resonant system may include a resonating body, a first electrode formed over a first surface of the resonating body, a second electrode formed over a second surface of the resonating body, and a sacrificial layer formed over the first electrode. In an embodiment, at least a portion of the first electrode is not covered by the sacrificial layer. In an embodiment, the conductive housing may secure the resonant system. Additionally, the conductive housing contacts the first electrode, and at least a portion of an interior edge of the conductive housing may be spaced away from the sacrificial layer.

公开(公告)号：US20240186118A1

公开(公告)日：2024-06-06

申请号：US18419389

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： JAMES CARDUCCI ,  RICHARD C. FOVELL ,  LARRY D. ELIZAGA ,  SILVERST RODRIGUES ,  VLADIMIR KNYAZIK ,  PHILIP ALLAN KRAUS ,  THAI CHENG CHUA

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/511

CPC classification number: H01J37/3244 ,  C23C16/45559 ,  C23C16/45561 ,  C23C16/511 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/335

Abstract: Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

公开(公告)号：US20190326096A1

公开(公告)日：2019-10-24

申请号：US15958569

申请日：2018-04-20

Applicant: APPLIED MATERIALS, INC.

Inventor： PHILIP ALLAN KRAUS ,  THAI CHENG CHUA ,  CHRISTIAN AMORMINO ,  DMITRY A. DZILNO

IPC: H01J37/32 ,  H01Q3/34 ,  H03B5/24 ,  H01Q21/00

Abstract: Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.

公开(公告)号：US20240219337A1

公开(公告)日：2024-07-04

申请号：US18604257

申请日：2024-03-13

Applicant: Applied Materials, Inc.

Inventor： XIAOPU LI ,  KALLOL BERA ,  YAOLING PAN ,  KELVIN CHAN ,  AMIR BAYATI ,  PHILIP ALLAN KRAUS ,  KENRIC T. CHOI ,  WILLIAM JOHN DURAND

IPC: G01N27/22 ,  C23C16/455 ,  C23C16/52 ,  G01N33/00 ,  H01L21/67

CPC classification number: G01N27/22 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/52 ,  G01N33/0027 ,  H01L21/67017 ,  H01L21/67253

Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

公开(公告)号：US20240096605A1

公开(公告)日：2024-03-21

申请号：US17946947

申请日：2022-09-16

Applicant: Applied Materials, Inc.

Inventor： Arun Kumar Kotrappa ,  CHANDRASHEKARA BAGINAGERE ,  RAMCHARAN SUNDAR ,  SEYYED FAZELI ,  ANANTHA SUBRAMANI ,  SIYU ZHU ,  AKHIL SINGHAL ,  PHILIP ALLAN KRAUS

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  H01L21/687

CPC classification number: H01J37/32715 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/68742 ,  H01J37/32082 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/332

Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, a pedestal in the chamber, and a first gas feed system on a first side of the pedestal. In an embodiment, the first gas feed system comprises a first exhaust line with a first valve to open and close the first exhaust line, and a first source gas feed line with a second valve to open and close the first source gas feed line. In an embodiment, the semiconductor processing tool further comprises a second gas feed system on a second side of the pedestal. In an embodiment, the second gas feed system comprises a second exhaust line with a third valve to open and close the second exhaust line, and a second source gas feed line with a fourth valve to open and close the second source gas feed line.

公开(公告)号：US20230109912A1

公开(公告)日：2023-04-13

申请号：US17903913

申请日：2022-09-06

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  CHRISTIAN VALENCIA ,  DOREEN YONG ,  TUCK FOONG KOH ,  JENN-YUE WANG ,  PHILIP ALLAN KRAUS

IPC: H01L21/311

Abstract: Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.

公开(公告)号：US20180226225A1

公开(公告)日：2018-08-09

申请号：US15424405

申请日：2017-02-03

Applicant: APPLIED MATERIALS, INC.

Inventor： TRAVIS KOH ,  PHILIP ALLAN KRAUS ,  LEONID DORF ,  PRABU GOPALRAJA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32045 ,  H01J37/32027 ,  H01J37/32697 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6833

Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.