SHOWERHEAD ASSEMBLY
    1.
    发明申请

    公开(公告)号:US20210238746A1

    公开(公告)日:2021-08-05

    申请号:US16823898

    申请日:2020-03-19

    Abstract: A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si), wherein a bonding layer is provided on a back surface of at least one of the inner portion or outer portion; a backing plate formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the backing plate is bonded to at least one of the back surface of at least one of the inner portion or outer portion of the gas distribution plate.

    SHOWERHEAD ASSEMBLY
    2.
    发明申请

    公开(公告)号:US20210238745A1

    公开(公告)日:2021-08-05

    申请号:US16786292

    申请日:2020-02-10

    Abstract: A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a connector having a circular configuration and formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the connector is bonded to at least one of the inner portion and outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the connector.

    SHOWER HEAD ASSEMBLY
    3.
    发明申请

    公开(公告)号:US20210238744A1

    公开(公告)日:2021-08-05

    申请号:US16780855

    申请日:2020-02-03

    Abstract: A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a first ring body formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the first ring body is bonded to and extends from one of the inner portion or outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the first ring body.

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