公开(公告)号：US20210142987A1

公开(公告)日：2021-05-13

申请号：US17151349

申请日：2021-01-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke SHIMIZU ,  Taiki HATAKEYAMA ,  Sean S. KANG ,  Katsumasa KAWASAKI ,  Chunlei ZHANG

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US20210320012A1

公开(公告)日：2021-10-14

申请号：US16846869

申请日：2020-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke SHIMIZU ,  Taiki HATAKEYAMA ,  Shinichi KOSEKI ,  Sean S. KANG ,  Jairaj Joseph PAYYAPILLY ,  Hikaru WATANABE

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/033

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.