公开(公告)号：US20210142987A1

公开(公告)日：2021-05-13

申请号：US17151349

申请日：2021-01-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke SHIMIZU ,  Taiki HATAKEYAMA ,  Sean S. KANG ,  Katsumasa KAWASAKI ,  Chunlei ZHANG

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US20230402286A1

公开(公告)日：2023-12-14

申请号：US17837958

申请日：2022-06-10

Applicant: Applied Materials, Inc.

Inventor： Daisuke SHIMIZU ,  Li LING ,  Hikaru WATANABE ,  Kenji TAKESHITA

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334

Abstract: Methods and apparatus for etching a substrate in a plasma etch chamber are provided. In one example, the method includes exposing a substrate disposed on a substrate supporting surface of a substrate support to a plasma within a processing chamber, and applying a voltage waveform to an electrode disposed in the substrate support while the substrate is exposed to the plasma during a plurality of macro etch cycles. Each macro etch cycle includes a first macro etch period and a second macro etch period. The macro etch period includes a plurality of micro etch cycles. Each micro etch cycle has a bias power on (BPON) period and a bias power off (BPOFF) period, wherein a duration of the BPON period being less than a duration of the BPOFF period. Bias power is predominantly not applied to the electrode during the second macro etch period.

公开(公告)号：US20210320012A1

公开(公告)日：2021-10-14

申请号：US16846869

申请日：2020-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke SHIMIZU ,  Taiki HATAKEYAMA ,  Shinichi KOSEKI ,  Sean S. KANG ,  Jairaj Joseph PAYYAPILLY ,  Hikaru WATANABE

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/033

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US20150072530A1

公开(公告)日：2015-03-12

申请号：US14020773

申请日：2013-09-06

Applicant: Applied Materials, Inc.

Inventor： Jong Mun KIM ,  Daisuke SHIMIZU ,  Katsumasa KAWASAKI ,  Sergio Fukuda SHOJI

IPC: H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/31116

Abstract: Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.

Abstract translation: 本发明的实施例提供了使用同步RF脉冲来蚀刻材料层的方法。 在一个实施例中，一种方法包括将气体混合物提供到处理室中，在第一时间点将第一RF源功率施加到处理室以在气体混合物中形成等离子体，在第二时间施加第一RF偏置功率 指向处理室，以对基板执行蚀刻处理，在第三时间点关闭第一RF偏置功率，同时从第一时间点到第二时间点和第三时间点持续保持第一RF源功率接通，以及 在第四时间点关闭第一RF源功率，同时从第一时间点到第二，第三和第四时间点连续地将气体混合物提供到处理室。