公开(公告)号：US20160196958A1

公开(公告)日：2016-07-07

申请号：US15068999

申请日：2016-03-14

Applicant: APPLIED MATERIALS, INC.

Inventor： GARY LERAY ,  VALENTIN NIKOLOV TODOROW

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32183

Abstract: Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.

公开(公告)号：US20130110435A1

公开(公告)日：2013-05-02

申请号：US13647624

申请日：2012-10-09

Applicant: APPLIED MATERIALS, INC.

Inventor： GARY LERAY ,  VALENTIN NIKOLOV TODOROW ,  SAMER BANNA

IPC: G06F19/00 ,  G01R27/16

CPC classification number: H01L21/6833 ,  G06F19/00

Abstract: Methods for calculating a self-bias on a substrate in a process chamber may include measuring a DC potential of a substrate disposed on a substrate support of a process chamber while providing a bias power from a power source to a cathode at a first frequency; measuring a voltage, current and phase shift at a matching network coupled to the power source while providing the bias power; calculating an effective impedance of the cathode by determining a linear relationship between a calculated voltage and the measured DC potential of the substrate; calculating a first linear coefficient and a second linear coefficient of the linear relationship between the calculated voltage and the measured DC potential of the substrate; and calculating a self bias on the substrate by utilizing the first linear coefficient, second linear coefficient, measured DC potential of the substrate, effective impedance, and measured phase shift.

Abstract translation: 用于计算处理室中的衬底上的自偏压的方法可以包括测量设​​置在处理室的衬底支撑件上的衬底的DC电位，同时以第一频率从电源向阴极提供偏置功率; 测量在耦合到电源的匹配网络处的电压，电流和相移，同时提供偏置功率; 通过确定所计算的电压和所测量的所述基板的DC电位之间的线性关系来计算所述阴极的有效阻抗; 计算所计算的电压与所测量的所述基板的DC电位之间的线性关系的第一线性系数和第二线性系数; 以及通过利用第一线性系数，第二线性系数，测量的衬底的DC电位，有效阻抗和测量的相移来计算衬底上的自偏压。