FREQUENCY TUNING FOR DUAL LEVEL RADIO FREQUENCY (RF) PULSING

    公开(公告)号:US20160196958A1

    公开(公告)日:2016-07-07

    申请号:US15068999

    申请日:2016-03-14

    Abstract: Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.

    SELF-BIAS CALCULATION ON A SUBSTRATE IN A PROCESS CHAMBER WITH BIAS POWER FOR SINGLE OR MULTIPLE FREQUENCIES
    2.
    发明申请
    SELF-BIAS CALCULATION ON A SUBSTRATE IN A PROCESS CHAMBER WITH BIAS POWER FOR SINGLE OR MULTIPLE FREQUENCIES 有权
    在单个或多个频率上具有偏置功率的过程室中的基板上的自偏差计算

    公开(公告)号:US20130110435A1

    公开(公告)日:2013-05-02

    申请号:US13647624

    申请日:2012-10-09

    CPC classification number: H01L21/6833 G06F19/00

    Abstract: Methods for calculating a self-bias on a substrate in a process chamber may include measuring a DC potential of a substrate disposed on a substrate support of a process chamber while providing a bias power from a power source to a cathode at a first frequency; measuring a voltage, current and phase shift at a matching network coupled to the power source while providing the bias power; calculating an effective impedance of the cathode by determining a linear relationship between a calculated voltage and the measured DC potential of the substrate; calculating a first linear coefficient and a second linear coefficient of the linear relationship between the calculated voltage and the measured DC potential of the substrate; and calculating a self bias on the substrate by utilizing the first linear coefficient, second linear coefficient, measured DC potential of the substrate, effective impedance, and measured phase shift.

    Abstract translation: 用于计算处理室中的衬底上的自偏压的方法可以包括测量设​​置在处理室的衬底支撑件上的衬底的DC电位,同时以第一频率从电源向阴极提供偏置功率; 测量在耦合到电源的匹配网络处的电压,电流和相移,同时提供偏置功率; 通过确定所计算的电压和所测量的所述基板的DC电位之间的线性关系来计算所述阴极的有效阻抗; 计算所计算的电压与所测量的所述基板的DC电位之间的线性关系的第一线性系数和第二线性系数; 以及通过利用第一线性系数,第二线性系数,测量的衬底的DC电位,有效阻抗和测量的相移来计算衬底上的自偏压。

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