公开(公告)号：US20190221463A1

公开(公告)日：2019-07-18

申请号：US16360187

申请日：2019-03-21

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN TODOROW ,  SAMER BANNA ,  IMAD YOUSIF ,  ALBERT WANG ,  GARY LERAY

IPC: H01L21/683 ,  H01J37/32 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

Abstract: Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.

公开(公告)号：US20130155568A1

公开(公告)日：2013-06-20

申请号：US13651351

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN TODOROW ,  SAMER BANNA ,  IMAD YOUSIF ,  ALBERT WANG ,  GARY LERAY

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode.

Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的设备可以包括衬底支撑件，其包括设置在衬底支撑件内并且具有周边边缘和第一表面的第一电极; 设置在所述第一电极的所述第一表面上方的衬底支撑表面; 以及第二电极，其设置在所述基板支撑件内并且径向延伸超过所述第一电极的周边边缘，其中所述第二电极具有设置在所述第一电极的第一表面周围和上方的第二表面。

公开(公告)号：US20170347441A1

公开(公告)日：2017-11-30

申请号：US15212485

申请日：2016-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： GARY LERAY

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4645 ,  H05H2001/4667 ,  H05H2001/4682

Abstract: Methods and apparatus for plasma processing are provided herein. The method for controlling current ratio in a substrate processing chamber may include (a) providing a first RF signal to a first RF coil and a second RF coil at a first current ratio set point and a first current operating mode, (b) determining a first dynamic control limit for the first current ratio set point based on a value of the first current ratio set point and the first current operating mode, (c) measuring an amount of current supplied to each of the first and second coils, (d) determining the actual current ratio based on the measured amounts of current supplied to each of the first and second coils, (e) determining whether the actual current ratio determined is within the dynamic control limits, and (f) repeating steps (b)-(e) until the actual current ratio determined is within the dynamic control limits.

公开(公告)号：US20160196958A1

公开(公告)日：2016-07-07

申请号：US15068999

申请日：2016-03-14

Applicant: APPLIED MATERIALS, INC.

Inventor： GARY LERAY ,  VALENTIN NIKOLOV TODOROW

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32183

Abstract: Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.

公开(公告)号：US20130154175A1

公开(公告)日：2013-06-20

申请号：US13651354

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN TODOROW ,  SAMER BANNA ,  IMAD YOUSIF ,  ALBERT WANG ,  GARY LERAY

IPC: H01L21/68

Abstract: Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.

Abstract translation: 本文提供了与处理室的基板支撑件一起使用的工艺套件组件。 在一些实施例中，处理套件环可以包括具有外边缘，内边缘，顶表面和底部的环形主体，其中外边缘具有约12.473英寸至约12.479英寸的直径，并且内边缘具有 约11.726英寸至约11.728英寸的直径，并且其中所述环形体具有约0.116至约0.118英寸的高度; 以及设置在所述环形体的上表面上的多个突起，所述多个突起中的每一个围绕所述环形体对称设置。

公开(公告)号：US20130110435A1

公开(公告)日：2013-05-02

申请号：US13647624

申请日：2012-10-09

Applicant: APPLIED MATERIALS, INC.

Inventor： GARY LERAY ,  VALENTIN NIKOLOV TODOROW ,  SAMER BANNA

IPC: G06F19/00 ,  G01R27/16

CPC classification number: H01L21/6833 ,  G06F19/00

Abstract: Methods for calculating a self-bias on a substrate in a process chamber may include measuring a DC potential of a substrate disposed on a substrate support of a process chamber while providing a bias power from a power source to a cathode at a first frequency; measuring a voltage, current and phase shift at a matching network coupled to the power source while providing the bias power; calculating an effective impedance of the cathode by determining a linear relationship between a calculated voltage and the measured DC potential of the substrate; calculating a first linear coefficient and a second linear coefficient of the linear relationship between the calculated voltage and the measured DC potential of the substrate; and calculating a self bias on the substrate by utilizing the first linear coefficient, second linear coefficient, measured DC potential of the substrate, effective impedance, and measured phase shift.

Abstract translation: 用于计算处理室中的衬底上的自偏压的方法可以包括测量设​​置在处理室的衬底支撑件上的衬底的DC电位，同时以第一频率从电源向阴极提供偏置功率; 测量在耦合到电源的匹配网络处的电压，电流和相移，同时提供偏置功率; 通过确定所计算的电压和所测量的所述基板的DC电位之间的线性关系来计算所述阴极的有效阻抗; 计算所计算的电压与所测量的所述基板的DC电位之间的线性关系的第一线性系数和第二线性系数; 以及通过利用第一线性系数，第二线性系数，测量的衬底的DC电位，有效阻抗和测量的相移来计算衬底上的自偏压。