公开(公告)号：US11557499B2

公开(公告)日：2023-01-17

申请号：US17072082

申请日：2020-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuichi Wada ,  Kok Wei Tan ,  Chul Nyoung Lee ,  Siew Kit Hoi ,  Xinxin Wang ,  Zheng Min Clarence Chong ,  Yaoying Zhong ,  Kok Seong Teo

IPC: H01J37/32 ,  H01L21/683 ,  C23C4/134 ,  C23C14/34

Abstract: Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

公开(公告)号：US11674216B2

公开(公告)日：2023-06-13

申请号：US15930636

申请日：2020-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Siew Kit Hoi ,  Yaoying Zhong ,  Xinxin Wang ,  Zheng Min Clarence Chong

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/54

CPC classification number: C23C14/06 ,  C23C14/3435 ,  C23C14/541

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.

公开(公告)号：US12046460B1

公开(公告)日：2024-07-23

申请号：US18093138

申请日：2023-01-04

Applicant: Applied Materials, Inc.

Inventor： Yaoying Zhong ,  Siew Kit Hoi ,  Bridger Earl Hoerner

IPC: C23C14/54 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  H01J37/32

CPC classification number: H01J37/32724 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/541 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/24585 ,  H01J2237/332

Abstract: Methods, systems, and apparatus for controlling substrate temperature include: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on the substrate; and independently controlling fluid flowing in a plurality of separate fluid channels in the substrate support, each fluid channel corresponding to one zone of the plurality of zones, wherein fluid flow is controlled based on a target life and the temperature in each zone.

公开(公告)号：US12037676B1

公开(公告)日：2024-07-16

申请号：US18093141

申请日：2023-01-04

Applicant: Applied Materials, Inc.

Inventor： Yaoying Zhong ,  Siew Kit Hoi ,  Bridger Earl Hoerner

IPC: C23C14/54 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  G05D23/19

CPC classification number: C23C14/541 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  G05D23/1931

Abstract: Methods and apparatus for controlling substrate temperature, comprising: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on a substrate; and independently controlling a plurality of heaters in the substrate support, each heater corresponding to one zone of the plurality of zones, wherein each heater is controlled based on a target life and the temperature in each zone.