公开(公告)号：US11557499B2

公开(公告)日：2023-01-17

申请号：US17072082

申请日：2020-10-16

申请人： APPLIED MATERIALS, INC.

发明人： Yuichi Wada ,  Kok Wei Tan ,  Chul Nyoung Lee ,  Siew Kit Hoi ,  Xinxin Wang ,  Zheng Min Clarence Chong ,  Yaoying Zhong ,  Kok Seong Teo

IPC分类号： H01J37/32 ,  H01L21/683 ,  C23C4/134 ,  C23C14/34

摘要： Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

公开(公告)号：US11674216B2

公开(公告)日：2023-06-13

申请号：US15930636

申请日：2020-05-13

申请人： APPLIED MATERIALS, INC.

发明人： Siew Kit Hoi ,  Yaoying Zhong ,  Xinxin Wang ,  Zheng Min Clarence Chong

IPC分类号： C23C14/06 ,  C23C14/34 ,  C23C14/54

CPC分类号： C23C14/06 ,  C23C14/3435 ,  C23C14/541

摘要： Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.

公开(公告)号：US11670485B2

公开(公告)日：2023-06-06

申请号：US16545414

申请日：2019-08-20

申请人： APPLIED MATERIALS, INC.

发明人： Siew Kit Hoi ,  Zhong Yaoying ,  Xinxin Wang

IPC分类号： H01J37/32 ,  H01L21/02 ,  C23C14/14 ,  H01J37/34 ,  C23C14/35

CPC分类号： H01J37/32146 ,  C23C14/14 ,  C23C14/351 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/3455 ,  H01L21/02631 ,  H01J2237/332

摘要： Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; and depositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size.