公开(公告)号：US11581167B2

公开(公告)日：2023-02-14

申请号：US17351535

申请日：2021-06-18

申请人： Applied Materials, Inc.

发明人： David Gunther ,  Siew Kit Hoi ,  Kirankumar Neelasandra Savandaiah

IPC分类号： H01J37/32 ,  C23C14/50 ,  C23C14/35

摘要： Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

公开(公告)号：USD908645S1

公开(公告)日：2021-01-26

申请号：US29703194

申请日：2019-08-26

申请人： APPLIED MATERIALS, INC.

设计人： Kirankumar Neelasandra Savandaiah ,  David Gunther ,  Siew Kit Hoi

公开(公告)号：US10648071B2

公开(公告)日：2020-05-12

申请号：US15814696

申请日：2017-11-16

申请人： APPLIED MATERIALS, INC.

发明人： William Johanson ,  Siew Kit Hoi ,  John Mazzocco ,  Kirankumar Savandaiah ,  Prashant Prabhu

IPC分类号： H01J37/34 ,  C23C14/04 ,  H01J37/32 ,  C23C14/34

摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes an adapter having an adapter body and a shield portion radially inward of the adapter body; a heat transfer channel formed in the adapter body; a shadow ring coupled to the adapter such that the shield portion of the adapter extends over a portion of the shadow ring; and a ceramic insulator disposed between the shadow ring and the adapter to electrically isolate the shadow ring from the adapter.

公开(公告)号：US11557499B2

公开(公告)日：2023-01-17

申请号：US17072082

申请日：2020-10-16

申请人： APPLIED MATERIALS, INC.

发明人： Yuichi Wada ,  Kok Wei Tan ,  Chul Nyoung Lee ,  Siew Kit Hoi ,  Xinxin Wang ,  Zheng Min Clarence Chong ,  Yaoying Zhong ,  Kok Seong Teo

IPC分类号： H01J37/32 ,  H01L21/683 ,  C23C4/134 ,  C23C14/34

摘要： Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

公开(公告)号：USD851613S1

公开(公告)日：2019-06-18

申请号：US29621221

申请日：2017-10-05

申请人： APPLIED MATERIALS, INC.

设计人： William Johanson ,  Kirankumar Savandaiah ,  Anthony Chih-Tang Chan ,  Siew Kit Hoi ,  Prashant Prabhakar Prabhu

公开(公告)号：USD894137S1

公开(公告)日：2020-08-25

申请号：US29690617

申请日：2019-05-09

申请人： APPLIED MATERIALS, INC.

设计人： William Johanson ,  Kirankumar Savandaiah ,  Anthony Chih-Tang Chan ,  Siew Kit Hoi ,  Prashant Prabhakar Prabhu

公开(公告)号：US09978639B2

公开(公告)日：2018-05-22

申请号：US15335721

申请日：2016-10-27

申请人： APPLIED MATERIALS, INC.

发明人： Siew Kit Hoi ,  Arvind Sundarrajan ,  Jiao Song

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L21/285 ,  H01L21/67 ,  H01J37/32 ,  C23C14/34 ,  C23C14/16

CPC分类号： H01L21/76865 ,  C23C14/046 ,  C23C14/165 ,  C23C14/34 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32339 ,  H01J37/3244 ,  H01L21/2855 ,  H01L21/67069 ,  H01L21/76862 ,  H01L21/76871 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329

摘要： Methods for forming layers on a substrate having a feature are provided herein. In some embodiments, a method for forming layers on a substrate having a features may include depositing a copper layer within the feature, wherein a thickness of the copper layer disposed on upper corners of an opening of the feature and on an upper portion of a sidewall proximate the upper corners of the feature is greater than the thickness of the copper layer disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature; and exposing the substrate to a plasma formed from a process gas comprising hydrogen (H2) gas to selectively etch the copper layer proximate the upper corners of the opening and the upper portion of the sidewall proximate the upper corners, without substantially etching the copper layer proximate the lower portion of the sidewall proximate the bottom of the feature.