公开(公告)号：US11557499B2

公开(公告)日：2023-01-17

申请号：US17072082

申请日：2020-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuichi Wada ,  Kok Wei Tan ,  Chul Nyoung Lee ,  Siew Kit Hoi ,  Xinxin Wang ,  Zheng Min Clarence Chong ,  Yaoying Zhong ,  Kok Seong Teo

IPC: H01J37/32 ,  H01L21/683 ,  C23C4/134 ,  C23C14/34

Abstract: Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

公开(公告)号：USD851613S1

公开(公告)日：2019-06-18

申请号：US29621221

申请日：2017-10-05

Applicant: APPLIED MATERIALS, INC.

Designer： William Johanson ,  Kirankumar Savandaiah ,  Anthony Chih-Tang Chan ,  Siew Kit Hoi ,  Prashant Prabhakar Prabhu

公开(公告)号：US11784033B2

公开(公告)日：2023-10-10

申请号：US17333732

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Mengxue Wu ,  Siew Kit Hoi ,  Jay Min Soh ,  Yue Cui ,  Chul Nyoung Lee ,  Palaniappan Chidambaram ,  Jiao Song

IPC: C23C14/35 ,  H01J3/34 ,  H01J37/34 ,  C23C14/54 ,  C23C14/34

CPC classification number: H01J37/3476 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3455 ,  C23C14/351

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

公开(公告)号：USD908645S1

公开(公告)日：2021-01-26

申请号：US29703194

申请日：2019-08-26

Applicant: APPLIED MATERIALS, INC.

Designer： Kirankumar Neelasandra Savandaiah ,  David Gunther ,  Siew Kit Hoi

公开(公告)号：US10648071B2

公开(公告)日：2020-05-12

申请号：US15814696

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： William Johanson ,  Siew Kit Hoi ,  John Mazzocco ,  Kirankumar Savandaiah ,  Prashant Prabhu

IPC: H01J37/34 ,  C23C14/04 ,  H01J37/32 ,  C23C14/34

Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes an adapter having an adapter body and a shield portion radially inward of the adapter body; a heat transfer channel formed in the adapter body; a shadow ring coupled to the adapter such that the shield portion of the adapter extends over a portion of the shadow ring; and a ceramic insulator disposed between the shadow ring and the adapter to electrically isolate the shadow ring from the adapter.

公开(公告)号：US11674216B2

公开(公告)日：2023-06-13

申请号：US15930636

申请日：2020-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Siew Kit Hoi ,  Yaoying Zhong ,  Xinxin Wang ,  Zheng Min Clarence Chong

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/54

CPC classification number: C23C14/06 ,  C23C14/3435 ,  C23C14/541

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.

公开(公告)号：US11670485B2

公开(公告)日：2023-06-06

申请号：US16545414

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Siew Kit Hoi ,  Zhong Yaoying ,  Xinxin Wang

IPC: H01J37/32 ,  H01L21/02 ,  C23C14/14 ,  H01J37/34 ,  C23C14/35

CPC classification number: H01J37/32146 ,  C23C14/14 ,  C23C14/351 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/3455 ,  H01L21/02631 ,  H01J2237/332

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; and depositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size.

公开(公告)号：US11581167B2

公开(公告)日：2023-02-14

申请号：US17351535

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： David Gunther ,  Siew Kit Hoi ,  Kirankumar Neelasandra Savandaiah

IPC: H01J37/32 ,  C23C14/50 ,  C23C14/35

Abstract: Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

公开(公告)号：USD1053230S1

公开(公告)日：2024-12-03

申请号：US29839271

申请日：2022-05-19

Applicant: Applied Materials, Inc.

Designer： Siew Kit Hoi ,  Jay Min Soh ,  Mengxue Wu ,  Palaniappan Chidambaram

公开(公告)号：US12046460B1

公开(公告)日：2024-07-23

申请号：US18093138

申请日：2023-01-04

Applicant: Applied Materials, Inc.

Inventor： Yaoying Zhong ,  Siew Kit Hoi ,  Bridger Earl Hoerner

IPC: C23C14/54 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  H01J37/32

CPC classification number: H01J37/32724 ,  C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/541 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/24585 ,  H01J2237/332

Abstract: Methods, systems, and apparatus for controlling substrate temperature include: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on the substrate; and independently controlling fluid flowing in a plurality of separate fluid channels in the substrate support, each fluid channel corresponding to one zone of the plurality of zones, wherein fluid flow is controlled based on a target life and the temperature in each zone.