公开(公告)号：US20180155832A1

公开(公告)日：2018-06-07

申请号：US15827988

申请日：2017-11-30

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45534 ,  C23C16/06 ,  C23C16/08 ,  C23C16/305 ,  C23C16/34 ,  C23C16/45553

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US11821084B2

公开(公告)日：2023-11-21

申请号：US17448586

申请日：2021-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/30 ,  C23C16/06 ,  C23C16/34

CPC classification number: C23C16/45534 ,  C23C16/06 ,  C23C16/08 ,  C23C16/305 ,  C23C16/34 ,  C23C16/45553

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US20160265110A1

公开(公告)日：2016-09-15

申请号：US15073275

申请日：2016-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Jani Holopainen ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/50

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/401 ,  C23C16/50

Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.

Abstract translation: 本申请涉及用于生产金属磷酸盐如磷酸钛，磷酸铝和磷酸锂的原子层沉积（ALD）方法，以及用于沉积硅酸锂的ALD工艺。

公开(公告)号：US20220002868A1

公开(公告)日：2022-01-06

申请号：US17448586

申请日：2021-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/08 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US11155917B2

公开(公告)日：2021-10-26

申请号：US16835849

申请日：2020-03-31

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US20200340114A1

公开(公告)日：2020-10-29

申请号：US16835849

申请日：2020-03-31

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/08 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US09765431B2

公开(公告)日：2017-09-19

申请号：US15073275

申请日：2016-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Jani Holopainen ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/50 ,  C23C16/40

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/401 ,  C23C16/50

Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.