公开(公告)号：US20160265110A1

公开(公告)日：2016-09-15

申请号：US15073275

申请日：2016-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Jani Holopainen ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/50

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/401 ,  C23C16/50

Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.

Abstract translation: 本申请涉及用于生产金属磷酸盐如磷酸钛，磷酸铝和磷酸锂的原子层沉积（ALD）方法，以及用于沉积硅酸锂的ALD工艺。

公开(公告)号：US09765431B2

公开(公告)日：2017-09-19

申请号：US15073275

申请日：2016-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Jani Holopainen ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/50 ,  C23C16/40

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/401 ,  C23C16/50

Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.