公开(公告)号：US20240425986A1

公开(公告)日：2024-12-26

申请号：US18746189

申请日：2024-06-18

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Jiwen Xiang ,  Zhizhong Chen ,  Yang Wang ,  Xing Lin

IPC: C23C16/455 ,  C23C16/52

Abstract: Methods and apparatuses for decoupling the tuning of cross-substrate thickness variation and cross-substrate resistance variation in a gas injection system are described. A controller in a gas injection system may deposit, via control of the plurality of first mass flow controllers (MFCs) and the plurality of second MFCs, a material layer deposited on a substrate. The controller may adjust, via control of the plurality of first MFCs, a cross-substrate thickness variation of the material layer. The controller may adjust, via control of the plurality of second MFCs and independent of the cross-substrate thickness variation, cross-substrate resistivity variation of the material layer.

公开(公告)号：US20230128390A1

公开(公告)日：2023-04-27

申请号：US18048099

申请日：2022-10-20

Applicant: ASM IP Holding, B.V.

Inventor： Shujin Huang ,  Junweli Su ,  Wentao Wang ,  Zhizhong Chen ,  Xing Lin ,  Jiwen Xiang

IPC: H01L21/687

Abstract: A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.

公开(公告)号：US20240404891A1

公开(公告)日：2024-12-05

申请号：US18677160

申请日：2024-05-29

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Shujin Huang ,  Kevin Eugene Quinn ,  Yang Wang ,  Zhizhong Chen ,  Chengzi Huang

IPC: H01L21/66 ,  H01L21/324

Abstract: Substrate processing systems and methods include: (a) seating a substrate on a support; (b) optically measuring center substrate temperature using a first pyrometer; (c) optically measuring edge substrate temperature using a second pyrometer; and (d) determining an edge offset temperature between the edge substrate temperature and the center substrate temperature. Three temperature ramping steps are used to heat up the substrate for processing: two fast ramping steps and one slow ramping steps. After substrate processing, an initial, controlled cooling step is provided. During at least the second fast temperature ramping step, the slow temperature ramping step, the substrate processing step(s), and the initial controlled cooling step, heating of the substrate is controlled to place and/or hold the edge offset temperature within predetermined ranges in order to maintain uniform temperature and/or a desired temperature gradient across the substrate. Such systems and methods help avoid crystal defects (e.g., slip) and/or auto-doping.