公开(公告)号：US20210013037A1

公开(公告)日：2021-01-14

申请号：US16922520

申请日：2020-07-07

申请人： ASM IP Holding B.V.

发明人： Yiting Sun ,  David de Roest ,  Daniele Piumi ,  Ivo Johannes Raaijmakers ,  BokHeon Kim ,  Timothee Blanquart ,  Yoann Tomczak

IPC分类号： H01L21/033 ,  H01L21/311 ,  G03F7/20 ,  G03F7/38

摘要： Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.

公开(公告)号：US11482533B2

公开(公告)日：2022-10-25

申请号：US16789138

申请日：2020-02-12

申请人： ASM IP Holding B.V.

发明人： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L27/115 ,  H01L21/28 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

摘要： An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US20200266208A1

公开(公告)日：2020-08-20

申请号：US16789138

申请日：2020-02-12

申请人： ASM IP Holding B.V.

发明人： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

摘要： An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.