公开(公告)号：US20240361695A1

公开(公告)日：2024-10-31

申请号：US18644370

申请日：2024-04-24

Applicant: ASM IP Holding B.V.

Inventor： João Ricardo Antunes Afonso ,  Yiting Sun ,  Fanyong Ran ,  Jerome Samuel Nicolas ,  Zecheng Liu

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/075

CPC classification number: G03F7/167 ,  G03F7/0043 ,  G03F7/0751 ,  G03F7/0755

Abstract: Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.

公开(公告)号：US20210013037A1

公开(公告)日：2021-01-14

申请号：US16922520

申请日：2020-07-07

Applicant: ASM IP Holding B.V.

Inventor： Yiting Sun ,  David de Roest ,  Daniele Piumi ,  Ivo Johannes Raaijmakers ,  BokHeon Kim ,  Timothee Blanquart ,  Yoann Tomczak

IPC: H01L21/033 ,  H01L21/311 ,  G03F7/20 ,  G03F7/38

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.

公开(公告)号：US20240170282A1

公开(公告)日：2024-05-23

申请号：US18384448

申请日：2023-10-27

Applicant: ASM IP Holding B.V.

Inventor： Jerome Samuel Nicolas ,  Fanyong Ran ,  João Ricardo Antunes Afonso ,  Yiting Sun

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/027

CPC classification number: H01L21/02304 ,  C23C16/45544 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0271

Abstract: Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer. Properties of the adhesion layer can be tuned based on a selected photoresist by varying one or more process conditions.

公开(公告)号：US20220216059A1

公开(公告)日：2022-07-07

申请号：US17568027

申请日：2022-01-04

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Takashi Yoshida ,  Ryu Nakano ,  Ivan Zyulkov ,  Yiting Sun ,  Yoann Francis Tomczak ,  David de Roest

IPC: H01L21/285 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/02 ,  C23C16/52

Abstract: Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal- containing layer comprises oxygen and a metal.