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    SYSTEMS AND METHODS FOR PURGING REACTOR LOWER CHAMBERS WITH ETCHANTS DURING FILM DEPOSITION
    2.
    发明申请
    SYSTEMS AND METHODS FOR PURGING REACTOR LOWER CHAMBERS WITH ETCHANTS DURING FILM DEPOSITION 有权

    公开(公告)号：US20230116427A1

    公开(公告)日：2023-04-13

    申请号：US17962009

    申请日：2022-10-07

    Applicant: ASM IP Holding B.V.

    Inventor： Junwei Su ,  Jiwen Xiang ,  Shujin Huang ,  Loc Vinh Tran ,  Wentao Wang ,  Xing Lin

    IPC: C23C16/44 ,  H01L21/687 ,  H01L21/02 ,  C23C16/52 ,  C23C16/02 ,  C23C16/24

    Abstract: A semiconductor processing system includes a gas delivery module, and a chamber body connected to the gas delivery module. The divider has an aperture, is fixed within an interior of the chamber body, and separates an interior of the chamber body into upper and lower chambers, the aperture fluidly coupling the lower chamber to the upper chamber. A susceptor is arranged within the aperture. A controller is operably connected to the gas delivery module to purge the lower chamber with a first purge flow including an etchant while etching the upper chamber, purge the lower chamber with a second purge flow including the etchant while depositing a precoat in the upper chamber, and purge the lower chamber with a third purge flow including the etchant while depositing a film onto a substrate in the upper chamber. Film deposition methods and lower chamber etchant purge kits are also described.

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