公开(公告)号：US20180323059A1

公开(公告)日：2018-11-08

申请号：US15957565

申请日：2018-04-19

Applicant: ASM IP Holding B.V.

Inventor： Nupur Bhargava ,  John Tolle ,  Joe Margetis ,  Matthew Goodman ,  Robert Vyne

IPC: H01L21/02 ,  H01L29/66 ,  C30B25/10 ,  C30B29/10

CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B25/10 ,  C30B29/06 ,  C30B29/10 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L29/66795

Abstract: A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×1021 atoms per cubic centimeter.

公开(公告)号：US20210225688A1

公开(公告)日：2021-07-22

申请号：US17141610

申请日：2021-01-05

Applicant: ASM IP HOLDING B.V.

Inventor： Matthew Goodman ,  Thomas John Kirschenheiter ,  Kevin Eugene Quinn

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/67 ,  C30B25/12 ,  C30B29/06 ,  C23C16/24 ,  C23C16/458

Abstract: The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

公开(公告)号：US11594444B2

公开(公告)日：2023-02-28

申请号：US17141610

申请日：2021-01-05

Applicant: ASM IP HOLDING B.V.

Inventor： Matthew Goodman ,  Thomas John Kirschenheiter ,  Kevin Eugene Quinn

IPC: C30B25/10 ,  H01L21/687 ,  H01L21/02 ,  C23C16/458 ,  C30B25/12 ,  C30B29/06 ,  C23C16/24 ,  H01L21/67

Abstract: The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

公开(公告)号：US20220298672A1

公开(公告)日：2022-09-22

申请号：US17697107

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Hichem M'Saad ,  Alexandros Demos ,  Xing Lin ,  Junwei Su ,  Matthew Goodman ,  Daw Gen Lim ,  Shujin Huang ,  Rutvij Naik

IPC: C30B25/16 ,  H01L21/66 ,  C30B25/10 ,  C30B25/12 ,  C30B23/06 ,  C23C16/52 ,  C23C16/46 ,  C23C14/54 ,  F27B17/00 ,  H05B3/00 ,  H05B1/02 ,  G01J5/00

Abstract: A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

公开(公告)号：US20150267295A1

公开(公告)日：2015-09-24

申请号：US14219879

申请日：2014-03-19

Applicant: ASM IP Holding B.V.

Inventor： Eric Hill ,  John Tolle ,  Matthew Goodman

IPC: C23C16/458 ,  C23C16/455 ,  H05B6/10

CPC classification number: C23C16/4581 ,  C23C16/45504 ,  H05B6/105

Abstract: A substrate tray, a susceptor assembly including a substrate tray, and a reactor including a substrate tray and/or susceptor assembly are disclosed. The substrate tray is configured to retain a substrate during processing and can be formed of a substantially non-reactive material. The substrate tray can be received by a susceptor, formed of another material, to form the susceptor assembly.

Abstract translation: 公开了一种基板托盘，包括基板托盘的基座组件和包括基板托盘和/或基座组件的反应器。 衬底托盘被配置为在加工过程中保持衬底并且可以由基本上不反应的材料形成。 衬底托盘可以由由另一种材料形成的基座接收，以形成基座组件。

公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

Applicant: ASM IP Holding B.V.

Inventor： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC: H01L21/687 ,  C23C16/52 ,  C23C16/458

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US10446393B2

公开(公告)日：2019-10-15

申请号：US15957565

申请日：2018-04-19

Applicant: ASM IP Holding B.V.

Inventor： Nupur Bhargava ,  John Tolle ,  Joe Margetis ,  Matthew Goodman ,  Robert Vyne

IPC: H01L21/02 ,  H01L29/66 ,  C30B29/10 ,  C30B25/10 ,  C30B25/02 ,  C30B29/06 ,  C30B29/52

Abstract: A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×1021 atoms per cubic centimeter.