公开(公告)号：US20200240016A1

公开(公告)日：2020-07-30

申请号：US16257185

申请日：2019-01-25

Applicant: ASM IP Holding B.V.

Inventor： Takafumi HISAMITSU ,  Seiji OKURA

IPC: C23C16/455 ,  C23C16/40

Abstract: Examples of a oxide film forming method include providing a precursor to a reaction space including a substrate and a susceptor, and forming an oxide film on the substrate by introducing at least one of CxOy and NxOy (x and y are integers) as a reactant gas into the reaction space while applying a pulse RF power having a duty cycle less than 60% to an RF plate to generate plasma of the reactant gas, the RF plate being provided in the reaction space so as to face the susceptor, wherein the providing and the forming are repeated a predetermined number of times.

公开(公告)号：US20180066359A1

公开(公告)日：2018-03-08

申请号：US15807896

申请日：2017-11-09

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

公开(公告)号：US20150125628A1

公开(公告)日：2015-05-07

申请号：US14285831

申请日：2014-05-23

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

Abstract translation: 公开了一种沉积薄膜的方法，该方法包括将净化气体和源气体在第一时段内供应到多个反应器中，停止源气体的供应，以及将净化气体和反应气体供应到多个 反应器第二期，并将反应气体和等离子体供应到多个反应器中第三期。