公开(公告)号：US20150125628A1

公开(公告)日：2015-05-07

申请号：US14285831

申请日：2014-05-23

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

Abstract translation: 公开了一种沉积薄膜的方法，该方法包括将净化气体和源气体在第一时段内供应到多个反应器中，停止源气体的供应，以及将净化气体和反应气体供应到多个 反应器第二期，并将反应气体和等离子体供应到多个反应器中第三期。

公开(公告)号：US20180066359A1

公开(公告)日：2018-03-08

申请号：US15807896

申请日：2017-11-09

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

公开(公告)号：US20160060754A1

公开(公告)日：2016-03-03

申请号：US14840117

申请日：2015-08-31

Applicant: ASM IP Holding B.V.

Inventor： Hyung Wook NOH ,  Seung Woo CHOI ,  Dong Seok KANG

IPC: C23C16/26 ,  C23C16/455

CPC classification number: C23C16/26 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/50 ,  G02B1/111

Abstract: A method of depositing a thin film includes: supplying a first source gas to a reactor during a first time period; supplying a purge gas to the reactor during a second time period; supplying a second source gas to the reactor during a third time period; and supplying the purge gas to the reactor during a fourth time period, wherein the first source gas and the second source gas comprise polymer precursors, and wherein the first source gas and the second source gas are supplied at a temperature that is less than 100° C. or about 100° C. According to the method, uniformity and step coverage of a thin film can be improved by depositing an amorphous carbon layer using polymer precursors according to an Atomic layer deposition (ALD) method.

Abstract translation: 沉积薄膜的方法包括：在第一时间段内将第一源气体供应到反应器; 在第二时间段内向所述反应器供应净化气体; 在第三时间段内向所述反应器供应第二源气体; 以及在第四时间段内将净化气体供应到所述反应器，其中所述第一源气体和所述第二源气体包含聚合物前体，并且其中所述第一源气体和所述第二源气体在小于100° C.或约100℃。根据该方法，可以通过使用根据原子层沉积（ALD）方法的聚合物前体沉积无定形碳层来提高薄膜的均匀性和阶梯覆盖。