公开(公告)号：US20160060754A1

公开(公告)日：2016-03-03

申请号：US14840117

申请日：2015-08-31

Applicant: ASM IP Holding B.V.

Inventor： Hyung Wook NOH ,  Seung Woo CHOI ,  Dong Seok KANG

IPC: C23C16/26 ,  C23C16/455

CPC classification number: C23C16/26 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/50 ,  G02B1/111

Abstract: A method of depositing a thin film includes: supplying a first source gas to a reactor during a first time period; supplying a purge gas to the reactor during a second time period; supplying a second source gas to the reactor during a third time period; and supplying the purge gas to the reactor during a fourth time period, wherein the first source gas and the second source gas comprise polymer precursors, and wherein the first source gas and the second source gas are supplied at a temperature that is less than 100° C. or about 100° C. According to the method, uniformity and step coverage of a thin film can be improved by depositing an amorphous carbon layer using polymer precursors according to an Atomic layer deposition (ALD) method.

Abstract translation: 沉积薄膜的方法包括：在第一时间段内将第一源气体供应到反应器; 在第二时间段内向所述反应器供应净化气体; 在第三时间段内向所述反应器供应第二源气体; 以及在第四时间段内将净化气体供应到所述反应器，其中所述第一源气体和所述第二源气体包含聚合物前体，并且其中所述第一源气体和所述第二源气体在小于100° C.或约100℃。根据该方法，可以通过使用根据原子层沉积（ALD）方法的聚合物前体沉积无定形碳层来提高薄膜的均匀性和阶梯覆盖。

公开(公告)号：US20140120738A1

公开(公告)日：2014-05-01

申请号：US14067686

申请日：2013-10-30

Applicant: ASM IP Holding B.V.

Inventor： In Soo JUNG ,  Eun Kee HONG ,  Seung Woo CHOI ,  Dong Seok KANG ,  Yong Min YOO ,  Pei-Chung HSIAO

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/45529 ,  C23C16/45536 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

Abstract: A method for forming a silicon germanium oxide thin film on a substrate in a reaction space may be performed using an atomic layer deposition (ALD) process. The process may include at least one cycle comprising a germanium oxide deposition sub-cycle and a silicon oxide deposition sub-cycle. The germanium oxide deposition sub-cycle may include contacting the substrate with a germanium reactant, removing excess germanium reactant, and contacting the substrate with a first oxygen reactant. The silicon oxide deposition sub-cycle may include contacting the substrate with a silicon reactant, removing excess silicon reactant, and contacting the substrate with a second oxygen reactant. The films of the present disclosure exhibit desirable etch rates relative to thermal oxide. Depending on the films' composition, the etch rates may be higher or lower than the etch rates of thermal oxide.

Abstract translation: 可以使用原子层沉积（ALD）工艺在反应空间中的基板上形成氧化硅氧化物薄膜的方法。 该方法可以包括至少一个包括氧化锗沉积子循环和氧化硅沉积子循环的循环。 氧化锗沉积子循环可以包括使基底与锗反应物接触，除去过量的锗反应物，并使基底与第一氧反应物接触。 氧化硅沉积子循环可以包括使衬底与硅反应物接触，除去过量的硅反应物，并使衬底与第二氧反应物接触。 本公开的膜显示出相对于热氧化物的期望的蚀刻速率。 取决于膜的组成，蚀刻速率可以高于或低于热氧化物的蚀刻速率。

公开(公告)号：US20180066359A1

公开(公告)日：2018-03-08

申请号：US15807896

申请日：2017-11-09

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

公开(公告)号：US20150125628A1

公开(公告)日：2015-05-07

申请号：US14285831

申请日：2014-05-23

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

Abstract translation: 公开了一种沉积薄膜的方法，该方法包括将净化气体和源气体在第一时段内供应到多个反应器中，停止源气体的供应，以及将净化气体和反应气体供应到多个 反应器第二期，并将反应气体和等离子体供应到多个反应器中第三期。

公开(公告)号：US20180223424A1

公开(公告)日：2018-08-09

申请号：US15945863

申请日：2018-04-05

Applicant: ASM IP Holding B.V.

Inventor： Young-Jae KIM ,  Ki Jong KIM ,  Dong-Rak JUNG ,  Hak Yong KWON ,  Seung Woo CHOI

IPC: C23C16/44 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4401 ,  C23C16/4586 ,  H01L21/68742

Abstract: A deposition apparatus is provided to eliminate unnecessary empty spaces that may form between a substrate and a substrate supporting pin, which may be formed within a substrate supporting pin hole, by covering the substrate supporting pin, inserted into the substrate supporting pin hole formed in the substrate support, by a substrate supporting pin cover loaded on the substrate support. Accordingly, the temperature under the substrate can be maintained constant, and generation of parasitic plasma or contaminating particles can be avoided.