公开(公告)号：US20150099072A1

公开(公告)日：2015-04-09

申请号：US14050150

申请日：2013-10-09

Applicant: ASM IP Holding B.V.

Inventor： Noboru Takamure ,  Tatsuhiro Okabe

IPC: C23C16/517 ,  C23C16/40 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36

CPC classification number: C23C16/405 ,  C23C16/308 ,  C23C16/34 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/52

Abstract: A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH3-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.

Abstract translation: 通过使用四（二甲基氨基）钛（TDMAT）或四（二乙氨基）钛（TDEAT））的等离子体增强原子层沉积（PEALD）在衬底上形成含Ti膜的方法包括：将TDMAT和/或TDEAT引入 向放置基板的反应空间的脉冲; 连续向反应空间引入不含NH 3的反应气体; 将RF功率脉冲施加到反应空间，其中TDMAT和/或TDEAT的脉冲和RF功率的脉冲不重叠; 并重复上述步骤以在基板上沉积含Ti的膜。

公开(公告)号：US09556516B2

公开(公告)日：2017-01-31

申请号：US14050150

申请日：2013-10-09

Applicant: ASM IP Holding B.V.

Inventor： Noboru Takamure ,  Tatsuhiro Okabe

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/405 ,  C23C16/308 ,  C23C16/34 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/52

Abstract: A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH3-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.

Abstract translation: 通过使用四（二甲基氨基）钛（TDMAT）或四（二乙氨基）钛（TDEAT））的等离子体增强原子层沉积（PEALD）在衬底上形成含Ti膜的方法包括：将TDMAT和/或TDEAT引入 向放置基板的反应空间的脉冲; 连续向反应空间引入不含NH 3的反应气体; 将RF功率脉冲施加到反应空间，其中TDMAT和/或TDEAT的脉冲和RF功率的脉冲不重叠; 并重复上述步骤以在基板上沉积含Ti的膜。

公开(公告)号：US09142393B2

公开(公告)日：2015-09-22

申请号：US13901372

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Tatsuhiro Okabe ,  Atsuki Fukazawa

IPC: B08B7/00 ,  H01J37/32 ,  C23C16/44 ,  B08B9/00 ,  B08B9/027 ,  B08B5/00

CPC classification number: H01J37/32862 ,  B08B5/00 ,  B08B7/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23C16/4405 ,  H01J37/32091

Abstract: A method for cleaning a reaction chamber is conducted after depositing an oxide, nitride, or oxynitride film on a substrate in a reaction chamber having interior surfaces on which oxide, nitride, or oxynitride is accumulated as a result of the deposition, said oxide, nitride, or oxynitride being selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, metal oxide, metal nitride, and metal oxynitride. The method includes: oxidizing or nitriding the oxide, nitride, or oxynitride is accumulated on the interior surfaces of the reaction chamber, by RF-excited plasma of an oxygen- or nitrogen-containing gas in the absence of halide gas as a pre-cleaning step; and cleaning the interior surfaces of the reaction chamber, by RF-excited plasma of a halide cleaning gas.

Abstract translation: 在沉积氧化物，氮化物或氧氮化物的内表面上沉积氧化物，氮化物或氮氧化物膜的反应室中沉积氧化物，氮化物或氧氮化物膜后，进行反应室的清洗方法，所述氧化物，氮化物 或氧氮化物选自氧化硅，氮化硅，氮氧化硅，金属氧化物，金属氮化物和金属氮氧化物。 该方法包括：在不存在卤化物气体的情况下，氧化物，氮化物或氮氧化物积聚在反应室的内表面上的RF激发的含氧气体或含氮气体的等离子体作为预清洁 步; 并通过卤化物清洁气体的RF激发等离子体清洁反应室的内表面。

公开(公告)号：US20140345644A1

公开(公告)日：2014-11-27

申请号：US13901372

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Tatsuhiro Okabe ,  Atsuki Fukazawa

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B5/00 ,  B08B7/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23C16/4405 ,  H01J37/32091

Abstract: A method for cleaning a reaction chamber is conducted after depositing an oxide, nitride, or oxynitride film on a substrate in a reaction chamber having interior surfaces on which oxide, nitride, or oxynitride is accumulated as a result of the deposition, said oxide, nitride, or oxynitride being selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, metal oxide, metal nitride, and metal oxynitride. The method includes: oxidizing or nitriding the oxide, nitride, or oxynitride is accumulated on the interior surfaces of the reaction chamber, by RF-excited plasma of an oxygen- or nitrogen-containing gas in the absence of halide gas as a pre-cleaning step; and cleaning the interior surfaces of the reaction chamber, by RF-excited plasma of a halide cleaning gas.

Abstract translation: 在沉积氧化物，氮化物或氧氮化物的内表面上沉积氧化物，氮化物或氮氧化物膜的反应室中沉积氧化物，氮化物或氧氮化物膜后，进行反应室的清洗方法，所述氧化物，氮化物 或氧氮化物选自氧化硅，氮化硅，氮氧化硅，金属氧化物，金属氮化物和金属氮氧化物。 该方法包括：在不存在卤化物气体的情况下，氧化物，氮化物或氮氧化物积聚在反应室的内表面上的RF激发的含氧气体或含氮气体的等离子体作为预清洁 步; 并通过卤化物清洁气体的RF激发等离子体清洁反应室的内表面。