公开(公告)号：US12211742B2

公开(公告)日：2025-01-28

申请号：US17467590

申请日：2021-09-07

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  Viljami Pore ,  René Vervuurt ,  Jihee Jeon

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02 ,  H01L21/768

Abstract: Methods for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen. The gap filling fluid can be formed by introducing a precursor into the reaction chamber and introducing a co-reactant into the reaction chamber to form a gap filling fluid that at least partially fills the gap.

公开(公告)号：US20230349043A1

公开(公告)日：2023-11-02

申请号：US18207806

申请日：2023-06-09

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida ,  René Vervuurt

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458

CPC classification number: C23C16/45553 ,  C23C16/45502 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/458 ,  C23C16/52 ,  C23C16/308

Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.

公开(公告)号：US20220064795A1

公开(公告)日：2022-03-03

申请号：US17408940

申请日：2021-08-23

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida ,  René Vervuurt

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.

公开(公告)号：US11725280B2

公开(公告)日：2023-08-15

申请号：US17408940

申请日：2021-08-23

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida ,  René Vervuurt

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/30

CPC classification number: C23C16/45553 ,  C23C16/458 ,  C23C16/45502 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/52 ,  C23C16/308 ,  C23C16/402

Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.

公开(公告)号：US20220076996A1

公开(公告)日：2022-03-10

申请号：US17467590

申请日：2021-09-07

Applicant: ASM IP holding B.V.

Inventor： Timothee Blanquart ,  Viljami Pore ,  René Vervuurt ,  Jihee Jeon

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50 ,  C23C16/34

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen.