公开(公告)号：US20240352576A1

公开(公告)日：2024-10-24

申请号：US18761445

申请日：2024-07-02

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/28556

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20240339359A1

公开(公告)日：2024-10-10

申请号：US18626758

申请日：2024-04-04

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Jihee Jeon ,  YongMin Yoo ,  Andrey Sokolov ,  Maarten Stokhof ,  Steven Van Aerde ,  Dieter Pierreux ,  Hussein Mehdi

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02274

Abstract: The present disclosure relates to method and apparatuses for filling a gap on a substrate. The method comprises providing a substrate, which comprises at least one gap into a reaction chamber, depositing a silicon containing first layer onto the substrate; subjecting the first layer to a phosphorous containing compound to form a flowable intermediate material, which at least partially fills the at least one gap on the substrate; and forming a solid material comprising silicon.

公开(公告)号：US20230212744A1

公开(公告)日：2023-07-06

申请号：US18148568

申请日：2022-12-30

Applicant: ASM IP Holding, B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/762

CPC classification number: C23C16/45542 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/76224

Abstract: Methods and systems for filling a gap comprised in the substrate with a gap filling fluid. The gap filling fluid is formed in a plasma with a first precursor and a second precursor.

公开(公告)号：US20230099607A1

公开(公告)日：2023-03-30

申请号：US17953518

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: H01L21/02

Abstract: A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes depositing a soluble layer on a surface of the substrate and exposing the soluble layer to a solvent to thereby form solvated material within the gap. Exemplary methods can further include drying the solvated material and/or converting the solvated or dried material to another material.

公开(公告)号：US20230096062A1

公开(公告)日：2023-03-30

申请号：US17953566

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Jan Deckers

IPC: H01L21/4763 ,  H01L21/02

Abstract: A method and system for forming material within a gap on a surface of a substrate using metal material are disclosed. An exemplary method includes forming a layer of meltable material overlying the substrate and heating the meltable material to a flow temperature to form molten material that flows within the gap.

公开(公告)号：US20220076996A1

公开(公告)日：2022-03-10

申请号：US17467590

申请日：2021-09-07

Applicant: ASM IP holding B.V.

Inventor： Timothee Blanquart ,  Viljami Pore ,  René Vervuurt ,  Jihee Jeon

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50 ,  C23C16/34

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen.

公开(公告)号：US20180308686A1

公开(公告)日：2018-10-25

申请号：US16018692

申请日：2018-06-26

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  David de Roest ,  Jacob Woodruff ,  Michael Eugene Givens ,  Jan Willem Maes ,  Timothee Blanquart

IPC: H01L21/02 ,  H01L29/417 ,  H01L29/36 ,  H01L21/265

Abstract: A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.

公开(公告)号：US20250014908A1

公开(公告)日：2025-01-09

申请号：US18348602

申请日：2023-07-07

Applicant: ASM IP Holding, B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Shaoren Deng

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/027 ,  H01L21/768

Abstract: Disclosed are methods and related systems for topography-selective depositions. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a material on a distal surface of a gap, and not on at least one of sidewalls of the gap and proximal surfaces. Further described are methods for filling a gap with a high quality material by means of a sacrificial gap filling fluid.

公开(公告)号：US12104244B2

公开(公告)日：2024-10-01

申请号：US17953769

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/28556

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20240102156A1

公开(公告)日：2024-03-28

申请号：US18462938

申请日：2023-09-07

Applicant: ASM IP Holding, B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/04 ,  C23C16/32 ,  C23C16/34

CPC classification number: C23C16/045 ,  C23C16/325 ,  C23C16/342

Abstract: Methods and systems for mixing precursors are disclosed. Systems and methods disclosed herein comprise mixing a first precursor and a second precursor in a mixing chamber. The first precursor and the second precursor can be provided to the mixing chamber in the gas phase or as liquids.