公开(公告)号：US20220390832A1

公开(公告)日：2022-12-08

申请号：US17776728

申请日：2020-11-18

申请人： ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

发明人： Janardan NATH ,  Christopher John MASON ,  Duan-Fu Stephen HSU ,  Todd R. DOWNEY ,  Tian GANG

IPC分类号： G03F1/70 ,  G03F1/36 ,  G03F7/20

摘要： A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.

公开(公告)号：US20220214622A1

公开(公告)日：2022-07-07

申请号：US17605601

申请日：2020-04-14

申请人： ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

发明人： Janardan NATH ,  Kalyan Kumar MANKALA ,  Todd R. DOWNEY ,  Joseph Harry LYONS ,  Ozer UNLUHISARCIKLI ,  Alexander Harris LEDBETTER ,  Nicholas Stephen APONE ,  Tian GANG

IPC分类号： G03F7/20

摘要： An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.

公开(公告)号：US20240353756A1

公开(公告)日：2024-10-24

申请号：US18682789

申请日：2022-07-27

申请人： ASML Netherlands B.V.

发明人： Todd R. DOWNEY ,  Marianna MANCA ,  Widianta GOMULYA ,  Kalyan Kumar MANKALA ,  Janardan NATH

IPC分类号： G03F7/20

CPC分类号： G03F7/2004

摘要： Systems, apparatuses, and methods are provided for adjusting illumination slit uniformity in a lithographic apparatus. An example method can include determining whether an exposure field for a wafer exposure operation is less than a maximum exposure field of a uniformity correction system. In response to determining that the exposure field is less than the maximum exposure field, the example method can include modifying illumination slit uniformity calibration data associated with the maximum exposure field to generate modified illumination slit uniformity calibration data associated with the exposure field. Subsequently, the example method can include determining an optimal position of a finger assembly of the uniformity correction system based on the modified illumination slit uniformity calibration data.