COMPACT ALIGNMENT SENSOR ARRANGEMENTS

    公开(公告)号:US20210318627A1

    公开(公告)日:2021-10-14

    申请号:US17271684

    申请日:2019-08-22

    IPC分类号: G03F9/00 G03F7/20

    摘要: An apparatus and system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to a compact integrated optical device to create self images of the alignment mark which may be manipulated (e.g., mirrored, polarized) and combined to obtain information on the position of the mark and distortions within the mark. Also disclosed is a system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to an optical fiber arrangement to obtain information such as the position of the mark and distortions within the mark.

    ON CHIP SENSOR FOR WAFER OVERLAY MEASUREMENT

    公开(公告)号:US20240361703A1

    公开(公告)日:2024-10-31

    申请号:US18769032

    申请日:2024-07-10

    IPC分类号: G03F7/00 G02B6/122 G02B26/08

    摘要: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

    METROLOGY MARK STRUCTURE AND METHOD OF DETERMINING METROLOGY MARK STRUCTURE

    公开(公告)号:US20220350268A1

    公开(公告)日:2022-11-03

    申请号:US17765214

    申请日:2020-09-25

    IPC分类号: G03F9/00 G03F7/20 G01B11/26

    摘要: A structure of a semiconductor device with a sub-segmented grating structure as a metrology mark and a method for configuring the metrology mark. The method for configuring a metrology mark may be used in a lithography process. The method may include determining an initial characteristic function of an initial metrology mark disposed within a layer stack. The method also includes perturbing one or more variables of the plurality of subsegments of the metrology mark (e.g., pitch, duty cycle, and/or line width of the plurality of subsegments) and further perturbing a thickness of one or more layers within the layer stack. The method further includes iteratively performing the perturbations until a minimized characteristic function of an initial metrology mark is determined to set a configuration for the plurality of subsegments.

    METROLOGY SYSTEM AND METHOD
    6.
    发明申请

    公开(公告)号:US20220283515A1

    公开(公告)日:2022-09-08

    申请号:US17637156

    申请日:2020-08-25

    IPC分类号: G03F7/20

    摘要: A method of determining an overlay measurement associated with a substrate and a system to obtain an overlay measurement associated with a patterning process. A method for determining an overlay measurement may be used in a lithography patterning process. The method includes generating a diffraction signal by illuminating a first overlay pattern and a second overlay pattern using a coherent beam. The method also includes obtaining an interference pattern based on the diffraction signal. The method further includes determining an overlay measurement between the first overlay pattern and the second overlay pattern based on the interference pattern.

    Metrology Sensor, Lithographic Apparatus and Method for Manufacturing Devices

    公开(公告)号:US20210157248A1

    公开(公告)日:2021-05-27

    申请号:US16613551

    申请日:2018-04-13

    IPC分类号: G03F9/00 G01B11/00

    摘要: Disclosed is a metrology sensor apparatus comprising: an illumination system operable to illuminate a metrology mark in on a substrate with illumination radiation; an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark; and a wavelength dependent spatial filter for spatially filtering the scattered radiation, the wavelength dependent spatial filter having a spatial profile dependent on the wavelength of the scattered radiation. The wavelength dependent spatial filter may comprise a dichroic filter operable to substantially transmit scattered radiation within a first wavelength range and substantially block scattered radiation within a second wavelength range and at least one second filter operable to substantially block scattered radiation at least within the first wavelength range and the second wavelength range.

    SENSOR APPARATUS AND METHOD FOR LITHOGRAPHIC MEASUREMENTS

    公开(公告)号:US20220179331A1

    公开(公告)日:2022-06-09

    申请号:US17600174

    申请日:2020-03-25

    申请人: ASML HOLDING N.V.

    IPC分类号: G03F9/00

    摘要: Apparatus for, and method of, measuring a parameter of an alignment mark on a substrate in which an optical system is arranged to receive at least one diffraction order from the alignment mark and the diffraction order is modulated at a pupil or a wafer conjugate plane of the optical system, a solid state optical device is arranged to receive the modulated diffraction order, and a spectrometer is arranged to receive the modulated diffraction order from the solid state optical device and to determine an intensity of one or more spectral components in the modulated diffraction order.

    OPTICAL DESIGNS OF MINIATURIZED OVERLAY MEASUREMENT SYSTEM

    公开(公告)号:US20230059471A1

    公开(公告)日:2023-02-23

    申请号:US17796640

    申请日:2021-01-21

    申请人: ASML Holding N.V.

    IPC分类号: G03F7/20 G03F9/00

    摘要: A compact sensor apparatus having an illumination beam, a beam shaping system, a polarization modulation system, a beam projection system, and a signal detection system. The beam shaping system is configured to shape an illumination beam generated from the illumination system and generate a flat top beam spot of the illumination beam over a wavelength range from 400 nm to 2000 nm. The polarization modulation system is configured to provide tenability of linear polarization state of the illumination beam. The beam projection system is configured to project the flat top beam spot toward a target, such as an alignment mark on a substrate. The signal detection system is configured to collect a signal beam comprising diffraction order sub-beams generated from the target, and measure a characteristic (e.g., overlay) of the target based on the signal beam.

    LITHOGRAPHIC APPARATUS, METROLOGY SYSTEM, AND ILLUMINATION SYSTEMS WITH STRUCTURED ILLUMINATION

    公开(公告)号:US20220373895A1

    公开(公告)日:2022-11-24

    申请号:US17764139

    申请日:2020-09-14

    申请人: ASML Holding N.V.

    IPC分类号: G03F7/20

    摘要: A system (500) includes an illumination system (502), a lens element (506), and a detector (504). The illumination system generates a beam of radiation (510) having a first spatial intensity distribution (800) at a pupil plane (528) and a second spatial intensity distribution (900) at a plane of a target (514). The first spatial intensity distribution comprises an annular intensity profile (802) or an intensity profile corresponding to three or more beams. The lens element focuses the beam onto the target. The second spatial intensity distribution is a conjugate of the first intensity distribution and has an intensity profile corresponding to a central beam (902) and one or more side lobes (904) that are substantially isolated from the central beam. The central beam has a beam diameter of approximately 20 microns or less at the target. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation.