INTENSITY ORDER DIFFERENCE BASED METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF

    公开(公告)号:US20240094641A1

    公开(公告)日:2024-03-21

    申请号:US18255543

    申请日:2021-12-02

    IPC分类号: G03F7/00

    摘要: The system includes a radiation source, a diffractive element, an optical system, a detector, and a processor. The radiation source generates radiation. The diffractive element diffracts the radiation to generate a first beam and a second beam. The first beam includes a first non-zero diffraction order and the second beam includes a second non-zero diffraction order that is different from the first non-zero diffraction order. The optical system receives a first scattered beam and a second scattered radiation beam from a target structure and directs the first scattered beam and the second scattered beam towards a detector. The detector generates a detection signal. The processor analyzes the detection signal to determine a target structure property based on at least the detection signal. The first beam is attenuated with respect to the second beam or the first scattered beam is purposely attenuated with respect to the second scattered beam.

    PHASE MODULATORS IN ALIGNMENT TO DECREASE MARK SIZE

    公开(公告)号:US20220397833A1

    公开(公告)日:2022-12-15

    申请号:US17633884

    申请日:2020-08-05

    IPC分类号: G03F9/00

    摘要: An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.

    METROLOGY SYSTEM AND COHERENCE ADJUSTERS
    4.
    发明公开

    公开(公告)号:US20240027913A1

    公开(公告)日:2024-01-25

    申请号:US18255261

    申请日:2021-12-02

    IPC分类号: G03F7/00

    摘要: A metrology system (400) includes a multi-source radiation system. The multi-source radiation system includes a waveguide device (502) and the multi-source radiation system is configured to generate one or more beams of radiation. The metrology system (400) further includes a coherence adjuster (500) including a multimode waveguide device (504). The multimode waveguide device (504) includes an input configured to receive the one or more beams of radiation from the multi-source radiation system (514) and an output (518) configured to output a coherence adjusted beam of radiation for irradiating a target (418). The metrology system (400) further includes an actuator (506) coupled to the waveguide device (502) and configured to actuate the waveguide device (502) so as to change an impingement characteristic of the one or more beams of radiation at the input of the multimode waveguide device (504).

    METROLOGY SYSTEM AND METHOD
    5.
    发明申请

    公开(公告)号:US20220283515A1

    公开(公告)日:2022-09-08

    申请号:US17637156

    申请日:2020-08-25

    IPC分类号: G03F7/20

    摘要: A method of determining an overlay measurement associated with a substrate and a system to obtain an overlay measurement associated with a patterning process. A method for determining an overlay measurement may be used in a lithography patterning process. The method includes generating a diffraction signal by illuminating a first overlay pattern and a second overlay pattern using a coherent beam. The method also includes obtaining an interference pattern based on the diffraction signal. The method further includes determining an overlay measurement between the first overlay pattern and the second overlay pattern based on the interference pattern.

    Metrology Sensor, Lithographic Apparatus and Method for Manufacturing Devices

    公开(公告)号:US20210157248A1

    公开(公告)日:2021-05-27

    申请号:US16613551

    申请日:2018-04-13

    IPC分类号: G03F9/00 G01B11/00

    摘要: Disclosed is a metrology sensor apparatus comprising: an illumination system operable to illuminate a metrology mark in on a substrate with illumination radiation; an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark; and a wavelength dependent spatial filter for spatially filtering the scattered radiation, the wavelength dependent spatial filter having a spatial profile dependent on the wavelength of the scattered radiation. The wavelength dependent spatial filter may comprise a dichroic filter operable to substantially transmit scattered radiation within a first wavelength range and substantially block scattered radiation within a second wavelength range and at least one second filter operable to substantially block scattered radiation at least within the first wavelength range and the second wavelength range.

    OVERLAY MEASUREMENT SYSTEM USING LOCK-IN AMPLIFIER TECHNIQUE

    公开(公告)号:US20230008139A1

    公开(公告)日:2023-01-12

    申请号:US17782622

    申请日:2020-11-18

    IPC分类号: G03F7/20 G03F9/00

    摘要: A detection system (200) includes an illumination system (210), a first optical system (232), a phase modulator (220), a lock-in detector (255), and a function generator (230). The illumination system is configured to transmit an illumination beam (218) along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target (204) on a substrate (202). The first optical system is further configured to transmit a signal beam including diffraction order sub-beams (222, 224, 226) that are diffracted by the diffraction target. The phase modulator is configured to modulate the illumination beam or the signal beam based on a reference signal. The lock-in detector is configured to collect the signal beam and to measure a characteristic of the diffraction target based on the signal beam and the reference signal. The function generator is configured to generate the reference signal for the phase modulator and the lock-in detector.

    METROLOGY MARK STRUCTURE AND METHOD OF DETERMINING METROLOGY MARK STRUCTURE

    公开(公告)号:US20220350268A1

    公开(公告)日:2022-11-03

    申请号:US17765214

    申请日:2020-09-25

    IPC分类号: G03F9/00 G03F7/20 G01B11/26

    摘要: A structure of a semiconductor device with a sub-segmented grating structure as a metrology mark and a method for configuring the metrology mark. The method for configuring a metrology mark may be used in a lithography process. The method may include determining an initial characteristic function of an initial metrology mark disposed within a layer stack. The method also includes perturbing one or more variables of the plurality of subsegments of the metrology mark (e.g., pitch, duty cycle, and/or line width of the plurality of subsegments) and further perturbing a thickness of one or more layers within the layer stack. The method further includes iteratively performing the perturbations until a minimized characteristic function of an initial metrology mark is determined to set a configuration for the plurality of subsegments.