Method For Estimating Overlay
    2.
    发明申请

    公开(公告)号:US20190079414A1

    公开(公告)日:2019-03-14

    申请号:US16121735

    申请日:2018-09-05

    IPC分类号: G03F7/20 G06F17/18

    摘要: The present invention provides a method for determining overlay. The method comprises obtaining an initial overlay estimate relating to a first set of targets and data about a second set of targets, wherein the data for a target comprises an intensity measurement of the target for each of a group of different wavelengths. The method further comprises using the initial overlay estimate to filter data relating to the second set of targets and using the filtered data to estimate overlay on the substrate

    METROLOGY METHOD AND APPARATUS, COMPUTER PROGRAM AND LITHOGRAPHIC SYSTEM

    公开(公告)号:US20180136570A1

    公开(公告)日:2018-05-17

    申请号:US15869661

    申请日:2018-01-12

    IPC分类号: G03F7/20 G01B11/27 G01B11/24

    摘要: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

    Metrology Method and Apparatus, Computer Program and Lithographic System
    7.
    发明申请
    Metrology Method and Apparatus, Computer Program and Lithographic System 有权
    计量方法与仪器,计算机程序和光刻系统

    公开(公告)号:US20160313654A1

    公开(公告)日:2016-10-27

    申请号:US15133866

    申请日:2016-04-20

    IPC分类号: G03F7/20 G01B11/24 G01B11/27

    摘要: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

    摘要翻译: 公开了用于测量光刻工艺的参数的方法,计算机程序和相关联的装置。 该方法包括以下步骤:获得包括与多个第一结构相关的结构不对称性的测量的第一测量,所述多个测量结构不对称中的每一个对应于测量辐射的不同测量组合和至少第一参数的值 ; 获得与多个目标相关的目标不对称性的多个第二测量值,所述多个测量目标不对称中的每一个对应于所述不同测量组合之一,确定描述所述第一测量和所述第二测量之间的关系的关系函数, 对于每个所述测量组合; 根据所述关系函数确定校正重叠值,所述校正重叠值由于至少所述第一结构中的结构不对称而被校正为结构贡献。

    Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method

    公开(公告)号:US20190278190A1

    公开(公告)日:2019-09-12

    申请号:US16421697

    申请日:2019-05-24

    IPC分类号: G03F7/20

    摘要: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.